Zobrazeno 1 - 5
of 5
pro vyhledávání: '"P V Bulaev"'
Publikováno v:
Эпилепсия и пароксизмальные состояния, Vol 5, Iss 1, Pp 15-21 (2016)
Abstract: the article contains results of DTI with tractography estimation on structure of brain alterations diagnostics on epilepsy patients and data of correlation with clinic-neurophysiologic parameters. Findings define some aspects of epilepsy pa
Externí odkaz:
https://doaj.org/article/a3caeb3804b445c58f74303f6e548d1a
Autor:
N. V. Fetisova, I. S. Tarasov, Nikita A. Pikhtin, D. B. Nikitin, P V Bulaev, A.A. Marmalyuk, Sergey O. Slipchenko, M. A. Khomylev, A. A. Padalitsa, I D Zalevskii
Publikováno v:
Technical Physics Letters. 29:980-983
Quantum-confined InGaAs/AlGaAs/GaAs heterostructures for laser diodes emitting at λ=0.98 μm, optimized to provide for reduced radiation divergence in the vertical plane and decreased internal optical losses, have been synthesized by metalorganic-hy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39bf7bdc4e034be1ea657f490222ce99
https://doi.org/10.1134/1.1639448
https://doi.org/10.1134/1.1639448
Autor:
A V Petrovskii, Aleksandr A Marmalyuk, D. B. Nikitin, A A Padalitsa, O. I. Govorkov, I D Zalevskii, P V Bulaev, V G Krigel
Publikováno v:
Quantum Electronics. 32:216-218
Laser heterostructures with an active layer consisted of two strained InGaAs quantum wells are fabricated by the MOCVD epitaxy method. Single-mode laser diodes with a 3 — 4-μm wide stripe contact are made of the heterostructures and their spectral
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1127ace921a4542ff61d76b39dedb0a
https://doi.org/10.1070/qe2002v032n03abeh002164
https://doi.org/10.1070/qe2002v032n03abeh002164
Autor:
V. A. Simakov, Aleksandr A Marmalyuk, V P Konyaev, D. B. Nikitin, A A Padalitsa, Georgii M Zverev, I D Zalevskii, M. V. Zverkov, A V Petrovskii, P V Bulaev, V V Os'kin
Publikováno v:
Quantum Electronics. 32:213-215
Heterostructure lasers with a separate electronic and optical confinement based on strained quantum-well structures with single and double InGaAs quantum wells and different waveguide parameters are studied. The heterostructure design and technologic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9919258a0d897f426df919b796f1cce
https://doi.org/10.1070/qe2002v032n03abeh002163
https://doi.org/10.1070/qe2002v032n03abeh002163
Autor:
A. A. Padalitsa, V A Gorbylev, N V Markova, I D Zalevskii, Yurii M Popov, V V Bezotosnyi, P V Bulaev
Publikováno v:
Quantum Electronics. 28:292-293
A cw injection laser emitting near 808 nm was constructed and investigated. Reduction of the internal cavity losses and of the series resistance of the laser made it possible to increase the external differential quantum efficiency to 0.67 and to ach
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eae35f4a90add099efb69a5b383ac10e
https://doi.org/10.1070/qe1998v028n04abeh001197
https://doi.org/10.1070/qe1998v028n04abeh001197