Zobrazeno 1 - 10
of 10
pro vyhledávání: '"P Srihari Rao"'
Autor:
Maruti Ram Annamaraju, Subhadra Devi Velichety, Ravindra Kumar Boddeti, Srihari Rao Battalapalli
Publikováno v:
Asian Journal of Medical Sciences, Vol 12, Iss 4, Pp 110-117 (2021)
Background: Adrenal gland is a lifesaving endocrine gland of the human body. Knowledge of normal microscopic anatomy of the Adrenal gland facilitates Pathologists to correlate and make the differential diagnosis of various adrenal glands associated c
Externí odkaz:
https://doaj.org/article/1bcac0c5115342b49b80d228ca41e32c
Autor:
Maruti Ram Annamraju, Ravindra Kumar Boddeti, Subhadra Devi Velichety, Srihari Rao Battalapalli
Publikováno v:
Asian Journal of Medical Sciences, Vol 11, Iss 5, Pp 61-68 (2020)
Background: Fetal suprarenal gland consists of three zones. They are the outer definitive zone or neocortex (DZ) that forms adult Zona Glomerulosa (ZG), the centrally located fetal zone and a third transitional zone (TZ) the future adult Zona Fascicu
Externí odkaz:
https://doaj.org/article/45dd701964284563898a137864756a39
Publikováno v:
International Journal of Engineering and Advanced Technology. 9:236-241
FinFet transistors are used in major semiconductor organizations and a significant role is played by it in developing the silicon industries. Due to few embedded memories and other circuit issues the transistors have specific faults in manufacturing,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::579f8ad3bb79c424bd10cf00e5eebbea
https://doi.org/10.35940/ijeat.b3565.129219
https://doi.org/10.35940/ijeat.b3565.129219
Autor:
Bolledla Yakaiah, Apparasu Srihari Rao
Publikováno v:
Nonlinear Analysis, Vol 19, Iss 4 (2014)
In this paper an attempt is made to study the wave dispersion characteristics of a carbon nanorod through second, fourth, sixth and eighth order nonlocal strain gradient models. Expressions are derived for both wave number and wave speeds of the nano
Externí odkaz:
https://doaj.org/article/3c0e41ffab9a488b9470508b746e38ce
In this Research we are going to develop ROBDD (Reduced Ordered Binary Decision Diagram) designs to detect toggling faults, bridge faults and SAT (Stuck at Fault), Here we are going to develop sequential blocks using ROBDD and applying to the mux to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2659::373db19fd8b48f6e400dd69ce68fff0e
https://zenodo.org/record/4704159
https://zenodo.org/record/4704159
Fin Fet transistors are used in major semiconductor organizations and a significant role is played by it in developing the silicon industries. Due to few embedded memories and other circuit issues the transistors have specific faults in manufacturing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2659::2087d6a2d2130c9f4b3a02d2bfa97720
https://zenodo.org/record/5598772
https://zenodo.org/record/5598772
Publikováno v:
2018 International Conference on Recent Innovations in Electrical, Electronics & Communication Engineering (ICRIEECE).
FinFET transistors are used in major semiconductor organizations which plays an important role in the development of the silicon industries. Due to few embedded memories and other circuit issues the transistors have specific faults in manufacturing,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8c8fb49bd82da5aba56f9076c645ab6
https://doi.org/10.1109/icrieece44171.2018.9009416
https://doi.org/10.1109/icrieece44171.2018.9009416
Akademický článek
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Akademický článek
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Autor:
Sulakhe, Prakash V., Jagadeesh, Gowraganahalli, Phan, Ngoc T., Srihari Rao, T., Veeranjaneyulu, Addepalli
Publikováno v:
Molecular and Cellular Biochemistry; May 1990, Vol. 94 Issue: 2 p133-146, 14p