Zobrazeno 1 - 9
of 9
pro vyhledávání: '"P R Wilshaw"'
Autor:
Edris Khorani, Shona McNab, Tudor E. Scheul, Tasmiat Rahman, Ruy S. Bonilla, Stuart A. Boden, Peter R. Wilshaw
Publikováno v:
APL Materials, Vol 8, Iss 11, Pp 111106-111106-11 (2020)
Fully exploiting the power conversion efficiency limit of silicon solar cells requires the use of passivating contacts that minimize electrical losses at metal/silicon interfaces. An efficient hole-selective passivating contact remains one of the key
Externí odkaz:
https://doaj.org/article/27d727e18ddf4ab4bef5912f00cb8177
The magnetization of different samples of BiSCCO superconductor have been studied at low fields and the hysteresis loops obtained compared with a numerical simulation. The numerical simulation is used to provide details of the field dependence of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ff039b8c9caf6a7105ef3c597135d0e
https://ora.ox.ac.uk/objects/uuid:b00bfb88-759e-4ad4-8e91-f3124d8bf4a8
https://ora.ox.ac.uk/objects/uuid:b00bfb88-759e-4ad4-8e91-f3124d8bf4a8
Approximately 50% of solar cells are based on multicrystalline silicon (mc-Si). A major limiting factor in their efficiency is recombination of electron-hole pairs at dislocations. Manufacturers of mc-Si wafers are focussing on reducing dislocation d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1064::94e7d5c005283e43827e4d5f33e17013
http://ora.ox.ac.uk/objects/uuid:eb01fa27-e910-470a-8f85-cdb89707ab18
http://ora.ox.ac.uk/objects/uuid:eb01fa27-e910-470a-8f85-cdb89707ab18
Publikováno v:
Superconductor Science and Technology. 5:S355-S358
A technique that allows the flux-creep of bulk superconductors to be studied has been developed. This technique has been applied to the measurement of flux-creep in samples of lead doped BiSCCO 2223 that have undergone a variety of processing routes.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::baa99a5ef25853b39ac7e216bad6e0b9
https://doi.org/10.1088/0953-2048/5/1s/081
https://doi.org/10.1088/0953-2048/5/1s/081
Autor:
J. D. Murphy, P. R. Wilshaw
A novel dislocation locking technique is used to study the behaviour of nitrogen and oxygen in silicon. Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which nitrog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1064::ec2690ed7d087017b25deebca72f5e5f
http://ora.ox.ac.uk/objects/uuid:d6ff6bba-f9ec-497b-b0f4-2d4162f784cc
http://ora.ox.ac.uk/objects/uuid:d6ff6bba-f9ec-497b-b0f4-2d4162f784cc
An investigation of efficient room temperature luminescence from silicon which contains dislocations
Autor:
David J. Stowe, P. R. Wilshaw
This thesis presents an investigation of the phenomenon of efficient, room temperature luminescence from dislocation-engineered (DE) silicon. Previous work had demonstrated that the introduction of near-surface dislocation loops to a silicon substrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1064::cfa6663527fd5c5ba39e5a636b9febce
http://ora.ox.ac.uk/objects/uuid:9ee073b7-9e3c-4637-9ce1-62e9e4ade69d
http://ora.ox.ac.uk/objects/uuid:9ee073b7-9e3c-4637-9ce1-62e9e4ade69d
Autor:
T. S. Fell, P. R. Wilshaw
Publikováno v:
Springer Proceedings in Physics ISBN: 9783642763878
Springer Proceedings in Physics
Springer Proceedings in Physics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0d110066a266055f45a1c4a67f12997
https://doi.org/10.1007/978-3-642-76385-4_11
https://doi.org/10.1007/978-3-642-76385-4_11
Publikováno v:
2006 European Solid-State Device Research Conference; 2006, p435-438, 4p
Publikováno v:
Materialwissenschaft und Werkstoffechnik; Dec2003, Vol. 34 Issue 12, p1064-1068, 5p