Zobrazeno 1 - 10
of 779
pro vyhledávání: '"P P, Van Veldhoven"'
Autor:
Cano-Velázquez, M. S., Buntinx, S., Hendriks, A. L., Van Klinken, A., Li, C., Heijnen, B. J., Dolci, M., Picelli, L., Abdelkhalik, M. S., Sevo, P., Petruzzella, M., Pagliano, F., Hakkel, K. D., van Elst, D. M. J., van Veldhoven, P. J., Verhagen, E., Zijlstra, P., Fiore, A.
Optical sensors offer precision, remote read-out, and immunity to electromagnetic interference but face adoption challenges due to complex and costly readout instrumentation, mostly based on high-resolution. This article challenges the notion that hi
Externí odkaz:
http://arxiv.org/abs/2408.07487
We demonstrate coupling of a semiconductor quantum dot (QD) to an optomechanical cavity, mediated by the strain of a nano-mechanical mode. The device comprises an optomechanical photonic crystal nanobeam in GaAs with embedded In(Ga)As QDs. The flexur
Externí odkaz:
http://arxiv.org/abs/2407.09456
Autor:
Feyisa, Desalegn Wolde, Abdi, Salim, van Veldhoven, Rene, Calabretta, Nicola, Jiao, Yuqing, Stabile, Ripalta
Publikováno v:
Journal of Lightwave Technology
Managing insertion losses, polarizations and device footprint is crucial in developing large-scale photonic integrated circuits (PICs). This paper presents a solution to these critical challenges by designing a semiconductor optical amplifier (SOA) i
Externí odkaz:
http://arxiv.org/abs/2402.14429
Autor:
Granchi, N., Lodde, M., Stokkereit, K., Spalding, R., van Veldhoven, P. J., Sapienza, R., Fiore, A., Gurioli, M., Florescu, M., Intonti, F.
Publikováno v:
Phys. Rev. B 107, 064204 (2023)
Hyperuniform disordered photonic materials have recently been shown to display large, complete photonic band gaps and isotropic optical properties, and are emerging as strong candidates for a plethora of optoelectronic applications, making them compe
Externí odkaz:
http://arxiv.org/abs/2302.12590
Autor:
Amber I. Raja, Gillian Nicholls, Matthew Coldwell, Karin van Veldhoven, Vince Sandys, Barry Atkinson, Ian Nicholls, Antony Spencer, Alice Graham, Hannah Higgins, Christina Atchison, Chris Keen, Tony Fletcher, Neil Pearce, Elizabeth B. Brickley, Yiqun Chen
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-12 (2024)
Abstract An outbreak of SARS-CoV-2 (1 March to 10 May 2021) with an attack rate of 26.5% among approximately 1150 workers at a storage and distribution centre in England prompted a multidisciplinary outbreak investigation (5 May to 6 August 2021), wi
Externí odkaz:
https://doaj.org/article/9cc53607e1b24df7912c3b6b46f4242a
Autor:
Aleksandr Zozulia, Jeroen Bolk, Rene van Veldhoven, Gleb Nazarikov, Vadim Pogoretskiy, Samir Rihani, Graham Berry, Kevin Williams, Yuqing Jiao
Publikováno v:
Micro and Nano Engineering, Vol 23, Iss , Pp 100258- (2024)
We present a novel fabrication approach to an integrated nanophotonic platform, based on a III-V membrane bonded to a Si substrate with benzocyclobutene (BCB). The process incorporates a hybrid lithography strategy combining deep-UV and electron-beam
Externí odkaz:
https://doaj.org/article/9b2a6ff8609e4356bd0977cc4a77f4a0
Autor:
Tamara A. M. Mocking, Wieke M. van Oostveen, Jacobus P. D. van Veldhoven, Hugo Minnee, Cynthia M. Fehres, Charles E. Whitehurst, Adriaan P. IJzerman, Laura H. Heitman
Publikováno v:
Frontiers in Pharmacology, Vol 15 (2024)
The prostaglandin transporter (PGT, SLCO2A1) mediates transport of prostanoids (a.o. prostaglandin E2 (PGE2)) into cells and thereby promotes their degradation. Overexpression of PGT leads to low extracellular PGE2 levels and has been linked to impai
Externí odkaz:
https://doaj.org/article/e0cc08e3ad25430fb31c87cdf54e7ca2
Autor:
Tjeertes, D., Vela, A., Verstijnen, T. J. F., Banfi, E. G., van Veldhoven, P. J., Menzes, M. G., Capaz, R. B., Koiller, B., Koenraad, P. M.
Publikováno v:
Phys. Rev. B 104, 125433 (2021)
Silicon (Si) donors in GaAs have been the topic of extensive studies since Si is the most common and well understood n-type dopant in III-V semiconductor devices and substrates. The indirect bandgap of AlAs compared to the direct one of GaAs leads to
Externí odkaz:
http://arxiv.org/abs/2106.05695
Autor:
Zhang, Hao, de Moor, Michiel W. A., Bommer, Jouri D. S., Xu, Di, Wang, Guanzhong, van Loo, Nick, Liu, Chun-Xiao, Gazibegovic, Sasa, Logan, John A., Car, Diana, Veld, Roy L. M. Op het, van Veldhoven, Petrus J., Koelling, Sebastian, Verheijen, Marcel A., Pendharkar, Mihir, Pennachio, Daniel J., Shojaei, Borzoyeh, Lee, Joon Sue, Palmstrøm, Chris J., Bakkers, Erik P. A. M., Sarma, S. Das, Kouwenhoven, Leo P.
We report electron transport studies on InSb-Al hybrid semiconductor-superconductor nanowire devices. Tunnelling spectroscopy is used to measure the evolution of subgap states while varying magnetic field and voltages applied to various nearby gates.
Externí odkaz:
http://arxiv.org/abs/2101.11456
Autor:
Sophie van der Feltz, Vivi Schlünssen, Ioannis Basinas, Luise M Begtrup, Alex Burdorf, Jens PE Bonde, Esben M Flachs, Susan Peters, Anjoeka Pronk, Zara A Stokholm, Martie van Tongeren, Karin van Veldhoven, Karen M Oude Hengel, Henrik A Kolstad
Publikováno v:
Scandinavian Journal of Work, Environment & Health, Vol 49, Iss 6, Pp 375-385 (2023)
OBJECTIVES: This study investigates the associations between the Danish version of a job exposure matrix for COVID-19 (COVID-19-JEM) and Danish register-based SARS-CoV-2 infection information across three waves of the pandemic. The COVID-19-JEM consi
Externí odkaz:
https://doaj.org/article/f4a095d4cf9743d8a3bb062f0b11383c