Zobrazeno 1 - 10
of 18
pro vyhledávání: '"P N Chen"'
Publikováno v:
New Zealand Dental Journal; Dec2023, Vol. 119 Issue 4, p186-196, 11p
Publikováno v:
Proceedings of the International Conference on Natural Resources and Sustainable Development.
Autor:
S.Y. Chang, Hon-Jarn Lin, S.H. Yang, R. Chen, R.F. Tsui, Jhon-Jhy Liaw, S. M. Jang, M.C. Chiang, C. H. Hsieh, C.H. Yao, P N Chen, K T Lai, Y S Mor, Lin Chih-Yung, Chun-Kuang Chen, Kuang-Hsin Chen, Chia-Pin Lin, J.H. Chen, C.H. Tsai, Y. Ku, T. Miyashita, Ming-Huan Tsai, C. H. Lee, Chang Chih-Yang, Hou-Yu Chen, K.H. Pan, Shien-Yang Wu, Joy Cheng, C S Liang, Kuei-Shun Chen, C.H. Chang, Vincent S. Chang
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
For the first time, a leading edge 7nm CMOS platform technology for mobile SoC applications is presented. This technology provides >3.3X routed gate density and 35%∼40% speed gain or >65% power reduction over our 16nm FinFET technology. A fully fun
Publikováno v:
Genes, brain, and behavior. 16(4)
Phenylpropanolamine (PPA)-induced appetite control is associated with oxidative stress in the hypothalamus. This study explored whether hypothalamic antioxidants participated in hypothalamic ghrelin system-associated appetite control in PPA-treated r
Autor:
T. Miyashita, H.-H. Hsu, C.-A. Lu, Shien-Yang Wu, K.C. Kwong, P.-N. Chen, C.-Y. Chiang, Chiu-Lien Lee, B.C. Hsu, Ching-Wei Tsai, C.-Y. Lin, Huanlong Liu, H.-L. Yang, J.-C. Chiang, P.-H. Wu, Y. J. Lin, Yu-Sheng Wu
Publikováno v:
2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
A comprehensive analysis of fin profile effect on bulk FinFET device characteristics is described in this paper. Optimal fin profile and anti-punch-through (APT) implant profile are important to DC performance and multiple-Vt offering capability, whi
Autor:
T. Miyashita, P.-N. Chen, M.C. Chiang, Ching-Wei Tsai, Lin Chih-Yung, B.C. Hsu, Sy Wu, P.-H. Wu, K.C. Kwong
Publikováno v:
2015 Symposium on VLSI Technology (VLSI Technology).
High voltage I/O FinFET device optimization for a 16nm system-on-a-chip (SoC) technology is presented. After careful optimization through high electric field (E-field) mitigation by junction engineering, I/O FinFET devices with leakage current reduct
Publikováno v:
International Journal of Robust and Nonlinear Control. 9:573-579
Publikováno v:
2011 IEEE International Conference on IC Design & Technology.
This paper examines the temperature dependence of mismatching and harmonic distortion properties in nanoscale uniaxial strained pMOSFETs. Our results reveal that the temperature dependence of drain current mismatch as well as harmonics distortion can
Publikováno v:
Studies in health technology and informatics. 154
Functional electrical stimulation (FES) and rehabilitation robots are techniques used to assist in post-stroke rehabilitation. However, FES and rehabilitation robots are still separate systems currently; and their combined training effects on persons
Publikováno v:
Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials.