Zobrazeno 1 - 10
of 20
pro vyhledávání: '"P M, Litvin"'
Publikováno v:
Вестник Самарского университета: Аэрокосмическая техника, технологии и машиностроение, Vol 22, Iss 4, Pp 37-51 (2023)
Algorithms for determining the attitude position of an aircraft or helicopter-type unmanned aerial vehicle relative to the landing platform with special optical marks are considered. An assessment is made of the possibility of calculating the angular
Externí odkaz:
https://doaj.org/article/00875d3820d74159985d5354eb0cd8db
Autor:
V. M. Litvin
Publikováno v:
Vìsnik Dnìpropetrovsʹkogo Unìversitetu: Serìâ Bìologìâ, Ekologìâ, Vol 15, Iss 1, Pp 82-86 (2006)
The interrelation of viability of silkworm larvae with natural electromagnetic fields is investigated. On the large statistical material found by the UAAS Institute of Sericulture for 50 years, it is shown, that the geomagnetic activity is characteri
Externí odkaz:
https://doaj.org/article/be7627c40e6b46939d260ec9c3e0961d
Autor:
V. M. Litvin
Publikováno v:
Vìsnik Dnìpropetrovsʹkogo Unìversitetu: Serìâ Bìologìâ, Ekologìâ, Vol 14, Iss 2, Pp 102-106 (2006)
Influence of geomagnetic fields (GMF) on the silkworm culture was studied. The GMF stress-induced injury to the silkworms involves deterioration of graded and processing characteristics of the silk cocoons in years of high level of the geomagnetic ac
Externí odkaz:
https://doaj.org/article/a9c2e489dfe44668bb1dc9a84ed5feec
Autor:
V. M. Litvin
Publikováno v:
Vìsnik Dnìpropetrovsʹkogo Unìversitetu: Serìâ Bìologìâ, Ekologìâ, Vol 14, Iss 1, Pp 104-109 (2005)
Modes of spatial dislocation of living organisms have been analyzed. The passive dislocation mode, such as a drop, is widely used by animals and plants due to potential gravitational energy that is accumulated by organisms in relation to a ground sur
Externí odkaz:
https://doaj.org/article/270b6dd6f18a426ca6c327584e48e165
Autor:
I.V. Voskoboinik, S. I. Chugunova, S. A. Ivakhnenko, B. A. Galanov, A. A. Golubenko, Yu.V. Milman, O. M. Suprun, P. M. Litvin, V. N. Tkach
Publikováno v:
Journal of Superhard Materials. 38:289-305
A model of the indentation using conical and pyramidal indenters has been proposed, in which not only a sample but the indenter as well are elastoplastically deformed and their materials obey the Mises yield condition. These conditions are characteri
Publikováno v:
Semiconductors. 50:112-119
The effect of ultraviolet (UV) illumination on the electrical and spectral characteristics of Schottky-barrier photodiodes based on ZnS single crystals is studied. It is found that irradiation deteriorates their photosensitivity and changes the curre
Autor:
E.N. Reshetnyak, V.A. Belous, I. I. Timofeeva, G. N. Tolmacheva, Sergey Dub, V.D. Ovcharenko, P. M. Litvin, Aleksander Sergeevich Kuprin
Publikováno v:
Journal of Superhard Materials. 35:20-28
Protective coatings of the Ti-Al-Si-N system have been deposited from vacuum arc by sputtering a cathode of composition 78Ti-16Al-6Si in nitrogen. The coatings of the Ti-Al-Si-N system have been studied using X-ray diffraction analysis to examine pha
Autor:
Sergey Dub, G.N. Tolmachova, T. I. Dyuzheva, L. M. Lityagina, P. M. Litvin, N. V. Novikov, Vadim V. Brazhkin
Publikováno v:
Journal of Superhard Materials. 32:406-414
Comparative nanoindentation tests of stishovite and sapphire single crystals have been performed. It has been found that nanohardness of the (0001) plane of sapphire at a depth of 200 nm is 29.1 ± 0.1 GPa, while the nanohardness of the (110) plane o
Publikováno v:
Journal of Superhard Materials. 29:228-234
A new procedure for the determination of a local elastic modulus is suggested, which is based on the comparison between the nanoindentation data and the results of a numerical modelling of the contact interaction in the indenter-sample system. An ima
Publikováno v:
Klinichna khirurhiia. (10)
Impact of living organism on nonorganic materials, which are applied for the implants manufacturing, was studied. There was established, that organism of a recipient patient actively effects on exogenic material, destroying its superficial layer and