Zobrazeno 1 - 10
of 25
pro vyhledávání: '"P M, Koenraad"'
Autor:
Claudiu M. Iaru, Annalisa Brodu, Niels J. J. van Hoof, Stan E. T. ter Huurne, Jonathan Buhot, Federico Montanarella, Sophia Buhbut, Peter C. M. Christianen, Daniël Vanmaekelbergh, Celso de Mello Donega, Jaime Gòmez Rivas, Paul M. Koenraad, Andrei Yu. Silov
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
Electron-phonon interaction is essential for understanding electronic and optical properties of lead halide perovskites. Here, using multiphonon Raman scattering and THz time-domain spectroscopy, the authors characterize the full phonon spectrum of C
Externí odkaz:
https://doaj.org/article/7e5ca449a580406c9d802d83e6a700c3
Autor:
Raja S. R. Gajjela, Arthur L. Hendriks, James O. Douglas, Elisa M. Sala, Petr Steindl, Petr Klenovský, Paul A. J. Bagot, Michael P. Moody, Dieter Bimberg, Paul M. Koenraad
Publikováno v:
Light: Science & Applications, Vol 10, Iss 1, Pp 1-13 (2021)
Externí odkaz:
https://doaj.org/article/17813e447a9a4769a8d3f0c81ea07210
Autor:
Hisao Nakamura, Johannes Hofmann, Nobuki Inoue, Sebastian Koelling, Paul M. Koenraad, Gregor Mussler, Detlev Grützmacher, Vijay Narayan
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-10 (2020)
Abstract The interface between topological and normal insulators hosts metallic states that appear due to the change in band topology. While topological states at a surface, i.e., a topological insulator-air/vacuum interface, have been studied intens
Externí odkaz:
https://doaj.org/article/d11c7ac399a3471a845d6e573600f5a8
Autor:
Raja S. R. Gajjela, Paul M. Koenraad
Publikováno v:
Nanomaterials, Vol 11, Iss 1, p 85 (2021)
The fundamental understanding of quantum dot (QD) growth mechanism is essential to improve QD based optoelectronic devices. The size, shape, composition, and density of the QDs strongly influence the optoelectronic properties of the QDs. In this arti
Externí odkaz:
https://doaj.org/article/33580cb064554a59b074eecd58c8bb41
Autor:
Davide F. Grossi, Sebastian Koelling, Pavel A. Yunin, Paul M. Koenraad, Grigory V. Klimko, Sergey V. Sorokin, Mikhail N. Drozdov, Sergey V. Ivanov, Alexey A. Toropov, Andrei Y. Silov
Publikováno v:
Nanomaterials, Vol 10, Iss 7, p 1315 (2020)
The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass
Externí odkaz:
https://doaj.org/article/091a1a8d81d8459b9b4c808db81cfa28
Autor:
M. P. Young, C. S. Woodhead, J. Roberts, Y. J. Noori, M. T. Noble, A. Krier, E. P. Smakman, P. M. Koenraad, M. Hayne, R. J. Young
Publikováno v:
AIP Advances, Vol 4, Iss 11, Pp 117127-117127-6 (2014)
We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are
Externí odkaz:
https://doaj.org/article/dcafd4b798384e3dadb34e610e7beb7f
Autor:
E. P. Smakman, M. DeJarld, M. Luengo-Kovac, A. J. Martin, V. Sih, P. M. Koenraad, J. Millunchick
Publikováno v:
APL Materials, Vol 2, Iss 9, Pp 096111-096111-7 (2014)
GaSb quantum dots (QDs) in a GaAs matrix are investigated with cross-sectional scanning tunneling microscopy (X-STM) and photoluminescence (PL). We observe that Al-rich capping materials prevent destabilization of the nanostructures during the cappin
Externí odkaz:
https://doaj.org/article/5b2201844bb246e7bc23651337bf514b
Autor:
S, Assali, A, Dijkstra, A, Li, S, Koelling, M A, Verheijen, L, Gagliano, N, von den Driesch, D, Buca, P M, Koenraad, J E M, Haverkort, E P A M, Bakkers
Publikováno v:
Nano letters. 17(3)
Group IV semiconductor optoelectronic devices are now possible by using strain-free direct band gap GeSn alloys grown on a Ge/Si virtual substrate with Sn contents above 9%. Here, we demonstrate the growth of Ge/GeSn core/shell nanowire arrays with S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::f156c2455e614f90b878187987335a79
https://pubmed.ncbi.nlm.nih.gov/28165747
https://pubmed.ncbi.nlm.nih.gov/28165747
Autor:
X. Y. Chen, P. M. Koenraad
Publikováno v:
Noise in Physical Systems and 1/F Fluctuations.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a975bc64d8a84f8bdf1c6d4b958608d
https://doi.org/10.1142/9789812811165_0114
https://doi.org/10.1142/9789812811165_0114
Publikováno v:
Springer Proceedings in Physics ISBN: 9783642639937
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d98a78e4fe5b067a65b007325919111
https://doi.org/10.1007/978-3-642-59484-7_388
https://doi.org/10.1007/978-3-642-59484-7_388
