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pro vyhledávání: '"P L Rigolli"'
Publikováno v:
Semiconductor Science and Technology. 19:45-49
Electroluminescence studies were carried out as a function of bias and temperature to understand the nature of deep centres in 6H–SiC n-channel junction field-effect transistors (FETS) for high-power applications. Vanadium impurities in different c