Zobrazeno 1 - 10
of 183
pro vyhledávání: '"P G Eliseev"'
Autor:
J. Varela, D. Spong, L. Garcia, Y. Ghai, J. Ortiz, FAR3d project collaborators, P. Adulsiriswad, N. Aiba, E. Ascasíbar, A. Azegami, A. Bader, M. Baruzzo, H. Betar, B. Breizman, J. Breslau, A. Cappa, W. A. Cooper, D. del-Castillo-Negrete, A. Di Siena, X. Du, L. G. Eliseev, J. Garcia, J. M. García-Regaña, N. Gorelenkov, L. Herrera, C. Hidalgo, J. Huang, M. Honda, I. Holod, K. Ida, M. Idouakass, F. Jenko, C. Jiale, Y. Kamada, Y. Kazakov, S. Kobayashi, U. Losada, S. Mazzi, A. Melnikov, B. Ph. Van Milligen, D. Monseev, M. Murakami, K. Nagaoka, K. Nagasaki, M. Ochando, J. Ongena, K. Ogawa, S. Ohdachi, M. Osakabe, D. C. Pace, F. Papousek, F. Poli, M. Podesta, P. Pons-Villalonga, M. Poradzinski, J. M. Reynolds-Barredo, R. Sanchez, R. Seki, S. Sharapov, K. Shinohara, J. Shiraishi, Z. Stancar, Y. Sun, Y. Suzuki, K. Tanaka, S. Taimourzadeh, Y. Takemura, Y. Todo, T. Tokuzawa, V. Tribaldos, M. A. Van Zeeland, F. L. Waelbroeck, X. H. Wang, K. Y. Watanabe, A. Wingen, S. Yamamoto, M. Yoshinuma, H. Yang, D. Zarzoso, Y. Zou
Publikováno v:
Frontiers in Physics, Vol 12 (2024)
The development of reduced models provide efficient methods that can be used to perform short term experimental data analysis or narrow down the parametric range of more sophisticated numerical approaches. Reduced models are derived by simplifying th
Externí odkaz:
https://doaj.org/article/b1c104b555ac44ea870b1023f6ba7daf
Publikováno v:
Лесной журнал, Iss 5, Pp 151-163 (2023)
This paper presents research into the possibilities of using laser perforation to enhance the decorative properties of Siberian fir (Abies sibirica) wood. Fir wood is characterized by fairly modest physical and mechanical properties and featureless a
Externí odkaz:
https://doaj.org/article/9eedd34dbed946f283c5dcfc87a64306
Autor:
P G Eliseev
Publikováno v:
Quantum Electronics. 42:1073-1080
A survey is presented of works on creation and investigation of semiconductor lasers during 1957 – 1977 at the P.N. Lebedev Physics Institute. Many of these works were initiated by N.G. Basov, starting from pre-laser time, when N.G. Basov and his c
Autor:
P G Eliseev
Publikováno v:
Quantum Electronics. 35:791-794
The spectral perturbation is considered in a semiconductor active medium in the vicinity of the frequency of a strong electromagnetic wave. The nonlinear interaction of waves via the dynamic interference grating, or nonlinear scattering by population
Spectral perturbations in a semiconductor laser: I. Anomalous splitting in the mode-beating spectrum
Publikováno v:
Quantum Electronics. 35:787-790
Mode-beating spectra and their current and temperature dependences are studied in a semiconductor laser. In the mode-beating spectrum of InGaAs quantum well lasers, the anomalous splitting of the difference-frequency line into three components f0, f+
Publikováno v:
Quantum Electronics. 34:1127-1132
Some radiative and electric properties of heterostructures based on semiconductor nitrides emitting in the visible and UV regions are considered. The following anomalous properties of UV-emitting heterostructures are studied: the low-temperature emis
Autor:
P. G. Eliseev
Publikováno v:
Journal of Applied Physics. 93:5404-5415
In connection with some spectral anomalies of the luminescence in III–V semiconductors, we consider here the red spectral shift in partially disordered semiconductors, namely, in heavily doped GaAs and in alloys of InGaP and InGaN. The shift (of th
Autor:
P G Eliseev
Publikováno v:
Quantum Electronics. 32:1085-1096
A brief review of the development of physics and technology of semiconductor lasers, beginning from theoretical proposals made in the late 1950s up to now, is presented. For example, the threshold current density at room temperature, which was 105
Publikováno v:
Quantum Electronics. 30:664-668
The dependence of the mode optical gain on current in InAs/InGaAs quantum-dot structures grown by the method of molecular-beam epitaxy is obtained from the experimental study of ultra-low-threshold laser diodes. The record lowest inversion threshold
Autor:
P G Eliseev
Publikováno v:
Quantum Electronics. 30:152-157
The allowed intraband optical transitions in a quantum dot are considered in the context of their application in quantum-well IR detectors and unipolar semiconductor lasers. The atom-like quantum dot is described by using the harmonic oscillator mode