Zobrazeno 1 - 10
of 38
pro vyhledávání: '"P D Scovell"'
Publikováno v:
Reports on Progress in Physics. 52:349-388
The manufacture of complex integrated circuits demanded by present-day system designers requires the assembly of a large number of interacting process steps. Many of these process steps cannot be chosen without considering the effect of the other ste
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::255728b041b30ba8452fd18479fc0245
https://doi.org/10.1088/0034-4885/52/3/003
https://doi.org/10.1088/0034-4885/52/3/003
Autor:
P. D. Scovell, E. J. Spurgin
Publikováno v:
Journal of Applied Physics. 54:2413-2418
The use of a graphite strip heater to anneal implanted silicon has been investigated. The good electrical activity of an arsenic implanted layer obtained after annealing in this way is shown to degrade after simulated low temperature processing and l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::850da11864c432ee68834fd56a333391
https://doi.org/10.1063/1.332356
https://doi.org/10.1063/1.332356
Autor:
G. J. Morgan, P. D. Scovell
Publikováno v:
Journal of Polymer Science: Polymer Letters Edition. 15:193-198
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb840304586cb9a644869b75ea28ba3b
https://doi.org/10.1002/pol.1977.130150402
https://doi.org/10.1002/pol.1977.130150402
Publikováno v:
Journal of Applied Physics. 52:230-232
Rapid thermal annealing (4 min at 560 °C) of implanted As in Si can electrically activate concentrations up to 5×1020 cm−3, which exceeds the solubility at that temperature. Prolonged thermal annealing at the same temperature causes deactivation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5dd23f20a808e38cf0050fe0f4ccd20f
https://doi.org/10.1063/1.328482
https://doi.org/10.1063/1.328482
Autor:
P D Scovell
Publikováno v:
Physics Bulletin. 35:393-393
D V Morgan and K Board 1983 Chichester: John Wiley xii + 167 pp price £7.95 (paperback) ISBN 0 471 90148 2 This book, written for students with no prior specialist knowledge of the subject, provides a comprehensive introductory survey of the various
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7f776cd44e6200d370eb92af2c7c0f3
https://doi.org/10.1088/0031-9112/35/9/035
https://doi.org/10.1088/0031-9112/35/9/035
Autor:
P D Scovell
Publikováno v:
Physics Bulletin. 33:139-139
R R Hasiguti (ed) 1981 Bristol: The Institute of Physics xiv + 571 pp price £39 (IOP members' price £29.25) This book contains the proceedings of the 1980 conference on defects and radiation effects in semiconductors held at Oiso, Japan, in Septemb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84d6f565e04f699cb750668fc2b59b5d
https://doi.org/10.1088/0031-9112/33/4/034
https://doi.org/10.1088/0031-9112/33/4/034
Autor:
Fesciyan, S., Frisch, H. L.
Publikováno v:
Journal of Chemical Physics; Dec1977, Vol. 67 Issue 12, p5691-5694, 4p
Autor:
Scovell, P. D., Spurgin, E. J.
Publikováno v:
Journal of Applied Physics; May1983, Vol. 54 Issue 5, p2413-2418, 6p
Autor:
Williams, J. S., Short, K. T.
Publikováno v:
Journal of Applied Physics; Dec1982, Vol. 53 Issue 12, p8663-8667, 5p
Publikováno v:
Journal of Applied Physics; 2/1/1996, Vol. 79 Issue 3, p1794, 7p, 8 Graphs