Zobrazeno 1 - 10 of 31 pro vyhledávání: '"P B Lagov"'
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Transport and trap states in proton irradiated ultra-thick κ-Ga2O3
Autor: A. Y. Polyakov, V. I. Nikolaev, A. I. Pechnikov, E. B. Yakimov, P. B. Lagov, I. V. Shchemerov, A. A. Vasilev, A. I. Kochkova, A. V. Chernykh, In-Hwan Lee, S. J. Pearton
Publikováno v: Journal of Vacuum Science & Technology A. 41
Changes induced by irradiation with 1.1 MeV protons in the transport properties and deep trap spectra of thick (>80 μm) undoped κ-Ga2O3 layers grown on sapphire are reported. Prior to irradiation, the films had a donor concentration of ∼1015 cm
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::15ed468812877c548b646120dffc631c
https://doi.org/10.1116/6.0002673
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4
Akademický článek
Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si
Autor: A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, S. J. Pearton, F. Ren, A. V. Chernykh, P. B. Lagov, T. V. Kulevoy
Publikováno v: APL Materials, Vol 6, Iss 9, Pp 096102-096102-10 (2018)
Hole traps in hydride vapor phase epitaxy β-Ga2O3 films were studied by deep level transient spectroscopy with electrical and optical excitation (DLTS and ODLTS) and by photocapacitance and temperature dependence measurements. Irradiation with 20 Me
Externí odkaz: https://doaj.org/article/51030966a0d541259a7ed8198f7b791a
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6
Carrier removal rates in 1.1 MeV proton irradiated α-Ga2O3 (Sn)
Autor: A Y Polyakov, V I Nikolaev, A I Pechnikov, P B Lagov, I V Shchemerov, A A Vasilev, A V Chernykh, A I Kochkova, L Guzilova, Yu S Pavlov, T V Kulevoy, A S Doroshkevich, R Sh Isaev, A V Panichkin, S J Pearton
Publikováno v: Journal of Physics D: Applied Physics. 56:305103
Films of α-Ga2O3 (Sn) grown by halide vapor phase epitaxy on sapphire with donor densities in the range 5 × 1015–8.4 × 1019 cm−3 were irradiated at 25 °C with 1.1 MeV protons to fluences from 1013 to 1016 cm−2. For the lowest doped samples,
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c65acbeb51a87567b86f1484cae82dc4
https://doi.org/10.1088/1361-6463/acd06b
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7
Application of Radiation-Thermal Treatment to Suppress Sensitivity of Silicon Microcircuits to Single Radiation Effects
Autor: P. B. Lagov, A. A. Meshcheryakov, S. V. Golovanov, A. S. Drenin, N. A. Yudanov
Publikováno v: Rocket-space device engineering and information systems. 8:99-103
The paper analyses the possibility to reduce the sensitivity of silicon integrated circuits (ICs) to single radiation effects by means of radiation-thermal treatment including irradiation in charged particle accelerators and subsequent low-temperatur
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bf770c55612f15b9022ecf5c32920f34
https://doi.org/10.30894/issn2409-0239.2021.8.3.99.103
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9
Comparison of the Helium Porosity Parameters in Vanadium Alloy TEM Samples Prepared by Various Techniques
Autor: S. N. Korshunov, P. B. Lagov, M. S. Stal’tsov, I. I. Chernov
Publikováno v: Russian Metallurgy (Metally). 2020:206-211
The microstructures and the porosity parameters in vanadium alloys irradiated by helium ions are compared after preparing thin films from them for transmission electron microscopy (TEM) by two different techniques. V–1% Ti, V–1% Ta, V–2% Ta, an
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a6f57b6cdf12a91718bd648cf0573d79
https://doi.org/10.1134/s0036029520030143
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10
Development of Gas Porosity along the Ion Range in Vanadium Alloys during Sequential Helium and Hydrogen Ion Irradiation
Autor: S. N. Korshunov, M. S. Stal’tsov, B. A. Kalin, I. I. Chernov, P. B. Lagov
Publikováno v: Russian Metallurgy (Metally). 2019:1161-1166
The development of helium porosity in vanadium and its alloys with tungsten, zirconium, and tantalum during sequential ion irradiation by 40-keV He+ ions at 650°C to a fluence of 5 × 1020 m–2 and 20-keV H+ ions at 20°C to a fluence of 5 × 1020
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ef087ebf6fb3cd155453df635d515c67
https://doi.org/10.1134/s0036029519110119
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