Zobrazeno 1 - 10
of 130
pro vyhledávání: '"P A, Timoshenkov"'
Autor:
Volodymyr Timoshenkov
Publikováno v:
Theriologia Ukrainica, Vol 27, Pp 138-145 (2024)
The article analyses survey data of small mammals collected by the method of live trapping on two trap lines, the dynamics of beaver numbers in one of the colonies, and random encounters of roadkill mammals in the Homilshanski Lisy National Nature Pa
Externí odkaz:
https://doaj.org/article/6dd2398ab1f7431f8b5877adaff64c67
Akademický článek
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Autor:
Volodymyr Timoshenkov
Publikováno v:
Novitates Theriologicae, Vol 13, Pp 116-120 (2022)
Externí odkaz:
https://doaj.org/article/ea5b683e36f7430fa5983af08059e231
Autor:
V.S. Soloviev, S.P. Timoshenkov, A.S. Timoshenkov, A.I. Vinogradov, N.M. Kondratiev, N.A. Raschepkina
Publikováno v:
Компьютерная оптика, Vol 44, Iss 6, Pp 917-922 (2020)
The numerical simulation and selection of optimal parameters of the diffraction grating for a newly developed technology for the manufacture of plane waveguide systems are performed. In contrast to the use of ready-made silicon wafers on an insulator
Externí odkaz:
https://doaj.org/article/81045329a6f04a559a1d5958d3f12f83
Autor:
Volodymyr Timoshenkov
Publikováno v:
Novitates Theriologicae, Vol 12, Pp 334-341 (2021)
Externí odkaz:
https://doaj.org/article/863fe7a8455d4a2096ecc8eeb0d327dd
Autor:
Volodymyr Timoshenkov
Publikováno v:
Novitates Theriologicae, Vol 11, Pp 119-124 (2020)
Externí odkaz:
https://doaj.org/article/5c1b10068bf64eaa9c9067968b45c963
Autor:
Kukushkin S.A., Osipov A.V., Redkov A.V., Grashchenko A.S., Feoktistov N.A., Fedotov S.D., Statsenko V.N., Sokolov E.M., Timoshenkov S.P.
Publikováno v:
Reviews on Advanced Materials Science, Vol 57, Iss 1, Pp 82-96 (2018)
A fundamentally new method for synthesis of thick (200-400 nm) epitaxial films of silicon carbide on single-crystal Al2O3 substrates is proposed. The method develops the previously discovered method of topochemical substitution of atoms during the tr
Externí odkaz:
https://doaj.org/article/24f6b82858bf409a8bf4483d74247d4b
Publikováno v:
Известия высших учебных заведений России: Радиоэлектроника, Vol 0, Iss 5, Pp 28-35 (2017)
Heteroepitaxial silicon-on-sapphire (SOS) wafers with a layer thickness of 200 and 600 nm were fabricated by the vapor phase epitaxy with monosilane as a precursor. The assessment of structural quality of silicon-sapphire interface was carried out by
Externí odkaz:
https://doaj.org/article/9098dd06b70b4ba6af8e195c1e75dd1f
Autor:
Galkin, A. A., Timoshenkov, A. S., Erkin, P. V., Kochurina, E. S., Rodin, A. M., Solomkina, N. A., Timoshenkov, S. P., Lebedev, A. A.
Publikováno v:
Gyroscopy and Navigation; September 2023, Vol. 14 Issue: 3 p234-243, 10p
Publikováno v:
Фінансово-кредитна діяльність: проблеми теорії та практики, Vol 1, Iss 24 (2018)
Based on our analysis of trends and threats associated with the use of financial technology, we conclude that its implementation increases the complexity of the institutional structure of the financial system. Certain institutional factors earlier re
Externí odkaz:
https://doaj.org/article/5daa6a9b2a2e4a6584a76274374d5d88