Zobrazeno 1 - 3
of 3
pro vyhledávání: '"P .B. Howes"'
Autor:
Anthony Brewer, P. B. Howes, Colin W. Binns, C. Sibbley-Allen, M. P. Lowe, S. C. Thornton, O. Crisan, K. von Haeften
Publikováno v:
The European Physical Journal D. 52:11-14
Silicon clusters were produced by sputtering of a p-doped Si target and aggregation of the Si atoms in an argon gas atmosphere. The clusters were deposited in ultra high vacuum onto either (i) carbon transmission electron microscope (TEM) grids or (i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af21ed7d7e3620750283fae691512d3e
https://doi.org/10.1140/epjd/e2009-00024-x
https://doi.org/10.1140/epjd/e2009-00024-x
Autor:
H. T. Anyele, L. Seehofer, Clarence Cherian Matthai, A. H. Levermann, Robert L. Johnson, P .B. Howes, John Emyr MacDonald, K. A. Edwards, L. Lottermoser, Gerald Falkenberg, R. Feidenhans'l
Publikováno v:
Applied Surface Science. :124-129
We have studied the atomic structure of the View the MathML source reconstruction induced by adsorption of about 1.1 monolayers of Sn on Si(111) using surface X-ray diffraction (SXRD) and scanning tunnelling microscopy (STM). The experimentally obtai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0dc3c0754cea50f9edc4ecc8911216d
https://doi.org/10.1016/s0169-4332(96)00132-8
https://doi.org/10.1016/s0169-4332(96)00132-8
Publikováno v:
Surface Science, 424(2-3), 169-178. ELSEVIER SCIENCE BV
The low-temperature Si(111)7 x 7-Pb interface has been investigated using surface X-ray diffraction. The Schottky barrier height of the Pb/Si diode is known to depend on the atomic reconstruction of the interface. We have studied the structure of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6dc52cbf0ad9d4b857c03b173778aed1
https://hdl.handle.net/11370/7b226554-c6d0-44c0-a498-287430a29c80
https://hdl.handle.net/11370/7b226554-c6d0-44c0-a498-287430a29c80
