Zobrazeno 1 - 10
of 642
pro vyhledávání: '"P, Houssa"'
Publikováno v:
Computational Materials Science 242, 113042, 2024
Advancements in modern semiconductor devices increasingly depend on the utilization of amorphous materials and the reduction of material thickness, pushing the boundaries of their physical capabilities. The mechanical properties of these thin layers
Externí odkaz:
http://arxiv.org/abs/2405.19873
Self-heating effects can significantly degrade the performance in nanoscale devices. We investigate self-heating effects in such devices based on two-dimensional materials using ab-initio techniques. A new algorithm was developed to allow for efficie
Externí odkaz:
http://arxiv.org/abs/2405.13415
Autor:
Mellaerts, Simon, Bellani, Claudio, Hsu, Wei-Fan, Binetti, Alberto, Schouteden, Koen, Recaman-Payo, Maria, Menghini, Mariela, Zuazo, Juan Rubio, Sánchez, Jesús López, Seo, Jin Won, Houssa, Michel, Locquet, Jean-Pierre
Publikováno v:
ACS Appl. Mater. Interfaces 2021, 13, 30941-30949
Dimensional confinement has shown to be an effective strategy to tune competing degrees of freedom in complex oxides. Here, we achieved atomic layered growth of trigonal vanadium sesquioxide (V2O3) by means of oxygen-assisted molecular beam epitaxy.
Externí odkaz:
http://arxiv.org/abs/2312.04425
Autor:
Idzuchi, Hiroshi, Allcca, Andres E Llacsahuanga, Lu, Anh Khoa Augustin, Saito, Mitsuhiro, Houssa, Michel, Meng, Ruishen, Inoue, Kazutoshi, Pan, Xing-Chen, Tanigaki, Katsumi, Ikuhara, Yuichi, Nakanishi, Takeshi, Chen, Yong P
In the fundamental understanding of magnetic interactions between atoms in solids, the crystal lattice is one of the key parameters. As the effective tool for controlling the lattice using tensile stress is limited, there are only few demonstrations
Externí odkaz:
http://arxiv.org/abs/2306.08962
Autor:
Ruishen Meng, Lino M. C. Pereira, Joris Van de Vondel, Jin Won Seo, Jean-Pierre Locquet, Michel Houssa
Publikováno v:
ACS Omega, Vol 9, Iss 29, Pp 31890-31898 (2024)
Externí odkaz:
https://doaj.org/article/590f510119224636ad7734bc0a82e9bf
Autor:
Bouthayna El Amine, Fatema Mosseddaq, Abdelhadi Ait Houssa, Ahmed Bouaziz, Lhoussaine Moughli, Abdallah Oukarroum
Publikováno v:
Agricultural Water Management, Vol 300, Iss , Pp 108926- (2024)
Water and iron are crucial elements for soybean growth and development, particularly in calcareous soils and arid climatic conditions. The aim of this study was to improve iron and water use efficiency and enhance soybean resilience to water scarcity
Externí odkaz:
https://doaj.org/article/d5a1a5bc010f460ab273298e0fc0ec6a
Publikováno v:
npj Comput Mater 8, 230 (2022)
Two-dimensional (2D) ferromagnetic materials are considered as promising candidates for the future generations of spintronic devices. Yet, 2D materials with intrinsic ferromagnetism are scarce. High-throughput first-principles simulations are perform
Externí odkaz:
http://arxiv.org/abs/2204.01551
Publikováno v:
Physical Review MATERIALS 6, 064410 (2022)
Understanding ferroelectricity is of both fundamental and technological importance to further stimulate the development of new materials designs and manipulations. Here, we perform an in-depth first-principle study on the well-known ferroelectric bar
Externí odkaz:
http://arxiv.org/abs/2201.07569
We present, here, advanced DFT-NEGF techniques that we have implemented in our ATOmistic MOdelling Solver, ATOMOS, to explore transport in novel materials and devices and in particular in van-der-Waals heterojunction transistors. We describe our meth
Externí odkaz:
http://arxiv.org/abs/2106.07248
Publikováno v:
ACS Appl. Mater. Interfaces 2021, 13, 26, 30941-30949
Complementary to the development of highly three-dimensional (3D) integrated circuits in the continuation of Moore's law, there has been a growing interest in new 3D deformation strategies to improve device performance. To continue this search for ne
Externí odkaz:
http://arxiv.org/abs/2102.12190