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Akademický článek
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Akademický článek
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Autor:
Yildirim, Can, Micoulaut, Matthieu, Boolchand, Punit, Kantor, Innokenty, Mathon, Olivier, Gaspard, Jean-Pierre, Irifune, Tetsuo, Raty, Jean-Yves
Pressure induced structural modifications in vitreous Ge$_{x}$Se$_{100-x}$ (where 10 $\leq$ x $\leq$ 25)are investigated using X-ray absorption spectroscopy (XAS) along with supplementary X-ray diffraction (XRD) experiments and ab initio molecular dy
Externí odkaz:
http://arxiv.org/abs/1604.01933
The kinetics of homogenization of binary As$_x$Se$_{100-x}$ melts in the As concentration range $0\%$ $<$ $x$ $<$ $50\%$ are followed in FT-Raman profiling experiments, and show that 2 gram sized melts in the middle concentration range $20\%$ $<$ $x$
Externí odkaz:
http://arxiv.org/abs/1311.6385
Here we show that a new class of glasses composed of heavy metal oxides involving transition metals (V$_\text {2}$O$_\text{}$5-TeO$_\text{2}$), can surprisingly be designed from very basic tools using topology and rigidity of their underlying molecul
Externí odkaz:
http://arxiv.org/abs/1310.4789
Melt-fragility index (m) and glass molar volumes (Vm) of binary Ge-Se melts/glasses are found to change reproducibly as they are homogenized. Variance of Vm decreases as glasses homogenize, and the mean value of Vm increases to saturate at values cha
Externí odkaz:
http://arxiv.org/abs/1310.0663
Variation of fragility (m) of specially homogenized GexSe100-x melts are established from complex specific heat measurements, and show m(x) has a global minimum at an extremely low value (m=14.8(0.5)) in the 21.5%
Externí odkaz:
http://arxiv.org/abs/1310.0626
A Raman profiling method is used to monitor growth of GexSe100-x melts and reveals a two step process of homogenization. Resulting homogeneous glasses show the non-reversing enthalpy at Tg, {\Delta}Hnr(x), to show a square-well like variation with x,
Externí odkaz:
http://arxiv.org/abs/1107.4768
Publikováno v:
Solid State Communications 151, 1851-1855 (2011)
We introduce a Raman profiling method to track homogenization of Ge$_x$Se$_{100-x}$ melts in real time, and show that 2 gram melts reacted at 950{\deg}C in high vacuum homogenize in 168 hours on a scale of 10{\mu}m. Homogenization of melts is precurs
Externí odkaz:
http://arxiv.org/abs/1107.3901
Autor:
Cahay, M., Fairchild, S. B., Grazulis, L., Murray, P. T., Back, T. C., Boolchand, P., Semet, V., Binh, V. T., Wu, X., Poitras, D., Lockwood, D. J., Yu, F., Kuppa, V.
In their rocksalt structure, rare-earth monosulfides offer a more stable alternative to alkali metals to attain low or negative electron affinity when deposited on various III-V and II-VI semiconductor surfaces. In this article, we first describe the
Externí odkaz:
http://arxiv.org/abs/1107.2547