Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Ozcan Birgi"'
Autor:
Gorkem Oylumluoglu, A. Sertap Kavasoglu, Okan Yilmaz, A. Osman Kodolbas, Ozcan Birgi, Nese Kavasoglu, Rifat Kangi
Publikováno v:
Journal of Alloys and Compounds. 509:9394-9398
In this study, n-type hydrogenated amorphous silicon (a-Si:H) was fabricated on p-type crystalline silicon (c-Si) substrates to obtain heterojunction diodes. The amorphous films were obtained by the Plasma Enhanced Chemical Vapor Deposition (PECVD) t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c137e211e1aecbdc327ef9e3d3cf457e
https://doi.org/10.1016/j.jallcom.2011.07.044
https://doi.org/10.1016/j.jallcom.2011.07.044
Publikováno v:
Solar Energy Materials and Solar Cells. 95:727-730
Understanding charge separation and transport is momentously important for the rectification of solar cell performance. To probe photo-generated carrier dynamics, we implemented intensity modulated short circuit current spectroscopy (IMSCCS) on porou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cc9739c249050d281e05d84c697dca9
https://doi.org/10.1016/j.solmat.2010.10.012
https://doi.org/10.1016/j.solmat.2010.10.012
Autor:
Nese Kavasoglu, Şadan Özden, Sener Oktik, Osman Pakma, Bengul Metin, Ozcan Birgi, A. Sertap Kavasoglu, Cem Tozlu
Publikováno v:
Synthetic Metals. 159:1880-1884
The Poly(4-vinyl phenol) insulator layer was grown by spin coating technique onto p-Si substrate. Diode ideality factor (n), insulator layer thickness (δ), space charge region width (WD), interface state density (Nss), series resistance (Rs), accept
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b44a7a8cd2db1100d8e17ea2174bc100
https://doi.org/10.1016/j.synthmet.2009.06.015
https://doi.org/10.1016/j.synthmet.2009.06.015
Autor:
A. Sertap Kavasoglu, Nese Kavasoglu, Fahrettin Yakuphanoglu, Osman Pakma, Ozcan Birgi, Sener Oktik
In this study, temperature dependent current–voltage ( I – V ) measurements and investigation of the dc current transport mechanism of n-Si/MEH-PPV device have been performed. While the series resistance value displayed strongly temperature depen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee8845a9615ca4b66ecd2cbed4f54be6
https://hdl.handle.net/20.500.12402/2890
https://hdl.handle.net/20.500.12402/2890
Nontrivial negative capacitance (NC) effect, observed in a-Si:H/c-Si heterostructure devices, is discussed emphasizing the theoretical interpretation of experimental data. To explain NC effect, we have performed dark current voltage (I-V) and admitta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cef49ed36ac90d43b6d654f8baf8df54
https://aperta.ulakbim.gov.tr/record/89689
https://aperta.ulakbim.gov.tr/record/89689
Autor:
Nese Kavasoglu, Sener Oktik, Şadan Özden, A. Sertap Kavasoglu, Ozcan Birgi, Cem Tozlu, Bengul Metin, Osman Pakma
WOS: 000267944000023 In this study, temperature dependent current-voltage (I-V) measurements and investigation of the dc current transport mechanism of Au/poly(4-vinyl phenol)/p-Si device have been performed. While the series resistance value display
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0aeec268a8ebabea2dcb2ea18c26dd6a
https://hdl.handle.net/20.500.12809/4753
https://hdl.handle.net/20.500.12809/4753