Distance-Dependent Evolution of Electronic States in Kagome- Honeycomb Lateral Heterostructures in FeSn

Autor: Pham, Tuan Anh, Kang, Seoung-Hun, Ozbek, Yasemin, Yoon, Mina, Zhang, Pengpeng

In this work, we demonstrate the formation and electronic influence of lateral heterointerfaces in FeSn containing Kagome and honeycomb layers. Lateral heterostructures offer spatially resolved property control, enabling the integration of dissimilar

Externí odkaz: http://arxiv.org/abs/2403.07278

Interface-driven magnetic anisotropy in relaxed La$_{0.7}$Sr$_{0.3}$CrO$_3$/La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on MgO

Autor: Koohfar, Sanaz, Ozbek, Yasemin, Bland, Hayden S., Zhang, Zhan, Kumah, Divine P.

We investigate the structural and magnetic properties of La$_{0.7}$Sr$_{0.3}$CrO$_3$ (LSCO)/La$_{0.7}$Sr$_{0.3}$MnO$_3$(LSMO) heterostructures grown on (001)-oriented MgO by molecular beam epitaxy. Due to the large film-substrate lattice mismatch, st

Externí odkaz: http://arxiv.org/abs/2010.07180

Indium-Doped Crystals of SnSe2.

Autor: Ni, Danrui, Xu, Xianghan, Zhu, Zheyi, Ozbek, Yasemin, Mikšić Trontl, Vesna, Yang, Chen, Yang, Xiao, Louat, Alex, Cacho, Cephise, Ong, N. P., Zhang, Pengpeng, Valla, Tonica, Cava, Robert J.

Publikováno v: Journal of Physical Chemistry C; 7/4/2024, Vol. 128 Issue 26, p11054-11062, 9p

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Distance-Dependent Evolution of Electronic States in Kagome-Honeycomb Lateral Heterostructures in FeSn.

Autor: Pham TA; Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824, United States., Kang SH; Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States., Ozbek Y; Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824, United States., Yoon M; Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States., Zhang P; Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824, United States.

Publikováno v: ACS nano [ACS Nano] 2024 Mar 26; Vol. 18 (12), pp. 8768-8776. Date of Electronic Publication: 2024 Mar 15.