Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Ozan Ertop"'
Publikováno v:
Proceedings, Vol 2, Iss 13, p 926 (2018)
This paper presents, for the first time, a displacement sensor with inherent read-out circuit using an inverter built with WG-FET that has 16-nm-thick single crystalline silicon film. In WG-FET, electrical double layer (EDL) capacitances are formed a
Externí odkaz:
https://doaj.org/article/40cb876d3e17471ea069327cf2f6f6be
Publikováno v:
Proceedings, Vol 1, Iss 4, p 486 (2017)
This paper presents the effect of NaCl concentration on the operation of a water-gated field effect transistor (WG-FET) that uses 16-nm-thick single crystalline silicon (Si) film. In WG-FET, electrical double layer (EDL) formed at the water/silicon i
Externí odkaz:
https://doaj.org/article/f476e71c779a4c45b455b75a9ea36044
This paper presents, for the first time, the improvement of gain and bandwidth of water-gated field effect transistor (WG-FET) circuits using higher ion concentrations of NaCl solutions. WG-FET is fabricated using 16-nm-thick single crystalline silic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d47fe7564693b838adfed67dd81e9a27
https://aperta.ulakbim.gov.tr/record/73805
https://aperta.ulakbim.gov.tr/record/73805
Publikováno v:
Procedia Engineering. 168:1739-1742
Repeatable operation of a water-gated field effect transistor (WG-FET) with 16-nm-thick single crystalline silicon (Si) film is reported for the first time. For devices with fluidic interface, repeatability is highly important, especially when they a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d42dfbb08c26f46d3a3165ff27402b2c
Publikováno v:
Proceedings, Vol 2, Iss 13, p 926 (2018)
This paper presents, for the first time, a displacement sensor with inherent read-out circuit using an inverter built with WG-FET that has 16-nm-thick single crystalline silicon film. In WG-FET, electrical double layer (EDL) capacitances are formed a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d7f7db9e658758e31b24d8fc13b7a4d2
https://www.mdpi.com/2504-3900/2/13/926
https://www.mdpi.com/2504-3900/2/13/926
Publikováno v:
Scientific Reports
Scientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
Scientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
We introduced a novel water-gated field effect transistor (WG-FET) which uses 16-nm-thick mono-Si film as active layer. WG-FET devices use electrical double layer (EDL) as gate insulator and operate under 1 V without causing any electrochemical react
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5a1b267ffba60cc74a1302a8aa843eb
https://doi.org/10.1038/s41598-017-12439-8
https://doi.org/10.1038/s41598-017-12439-8
Publikováno v:
Proceedings, Vol 1, Iss 4, p 486 (2017)
This paper presents the effect of NaCl concentration on the operation of a water-gated field effect transistor (WG-FET) that uses 16-nm-thick single crystalline silicon (Si) film. In WG-FET, electrical double layer (EDL) formed at the water/silicon i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e2e6920458a08ea96b2f9f6e6c0a9b8b
https://doi.org/10.3390/proceedings1040486
https://doi.org/10.3390/proceedings1040486
Publikováno v:
Procedia Engineering. 87:76-79
A water-gated field effect transistor (WG-FET) with 16-nm-thick single crystalline silicon film is realized for the first time and tested with both probe and planar gate electrode structures. Simple and cheap process steps make it suitable for low co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8908701e85d979e483643a60a5ff9ffc
Autor:
Senol Mutlu, Ozan Ertop, Fatih Dinc, Peida Zhao, James A. Forrest, Bedri Gurkan Sonmez, Adam Raegen
Publikováno v:
Applied Physics Letters. 113:213101
In this paper, we propose a corrosion assisted exfoliation method as an improvement to the traditional tape exfoliation to obtain transition-metal dichalcogenide monolayers. Our method primarily relies on the electrochemical potential difference betw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5cfad0225bd67241a9ddf72134f8c66
https://doi.org/10.1063/1.5050027
https://doi.org/10.1063/1.5050027
Publikováno v:
Journal of Micromechanics and Microengineering. 28:115017
We present AC modeling of WG-FET devices based on gate probe distance. Small- and large-signal models are proposed. It is shown that unity gain frequency is inversely proportional to gate distance. Also, common source amplifier, inverter, and ring os
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2681ddb576f00d281e98fe7f6c60eb14
https://doi.org/10.1088/1361-6439/aae39e
https://doi.org/10.1088/1361-6439/aae39e