Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Ozan Arı"'
Autor:
Sinan Balci, Coskun Kocabas, Ilknur Tunc, Ozan Yakar, Ozan Arı, Osman Balci, Burkay Uzlu, Nahit Polat
Publikováno v:
Yakar, O, Balci, O, Uzlu, B, Polat, N, Ari, O, Tunc, I, Kocabas, C & Balci, S 2020, ' Hybrid J-Aggregate-Graphene Phototransistor ', ACS Applied Nano Materials, vol. 3, no. 1, pp. 409-417 . https://doi.org/10.1021/acsanm.9b02039, https://doi.org/10.1021/acsanm.9b02039
ACS Applied Nano Materials
ACS Applied Nano Materials
Uzlu, Burkay/0000-0001-6776-8901; Kocabas, Coskun/0000-0003-0831-5552; BALCI, SINAN/0000-0002-9809-8688; Yakar, Ozan/0000-0003-1679-8750
J-aggregates are fantastic self-assembled chromophores with a very narrow and extremely sharp absorbance ban
J-aggregates are fantastic self-assembled chromophores with a very narrow and extremely sharp absorbance ban
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70bb186d0ba6214725048b1b1b38d391
https://hdl.handle.net/11147/10226
https://hdl.handle.net/11147/10226
Publikováno v:
Quantum Information and Measurement (QIM) V: Quantum Technologies.
We present temperature-dependent micro-PL studies on a single defect in hexagonal boron nitride. A zero-phonon line emission accompanied by Stokes and anti-Stokes phonon sidebands (≈ 6.5 meV) with a Debye-Waller factor of 0.59 is observed.
Publikováno v:
Quantum Information and Measurement (QIM) V: Quantum Technologies.
We present a reversible energy transfer between a single defect in hBN and graphene. Dynamic control of Fermi level of graphene results in switching on and off single photon emission from a single quantum emitter.
Autor:
Demi Brownlie, Andreas von Kries, Giampiero Valenzano, Nicole Wild, Emel Yilmaz, Jesper Säfholm, Mamdoh Al-Ameri, Evren Alici, Hans-Gustaf Ljunggren, Igor Schliemann, Ozan Aricak, Felix Haglund de Flon, Jakob Michaëlsson, Nicole Marquardt
Publikováno v:
OncoImmunology, Vol 12, Iss 1 (2023)
ABSTRACTLung cancer is a leading cause of cancer-related death worldwide. Despite recent advances in tissue immunology, little is known about the spatial distribution of tissue-resident lymphocyte subsets in lung tumors. Using high-parameter flow cyt
Externí odkaz:
https://doaj.org/article/000ae8fd19714447920bbd41b44f02c9
Publikováno v:
physica status solidi c. 12:1211-1214
CdTe based II-VI absorbers are promising candidates for high concentration PV solar cells with an ideal band gap for AM1.5 solar radiation. In this study, we propose single crystal CdTe absorbers grown on GaAs substrates with a molecular beam epitaxy
Autor:
Elif Ozceri, Hadi M. Zareie, Cihan Bacaksiz, Ramazan Tuğrul Senger, Ozan Arı, Yusuf Selamet, Alper Yanılmaz, Aysel Tomak, Barış Akbalı
Publikováno v:
RSC advances
We report experimental and theoretical investigations of nitrogen doped graphene. A low-pressure Chemical Vapor Deposition (CVD) system was used to grow large-area graphene on copper foil, using ethylene as the carbon source. Nitrogen-doped graphene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b6612828a8268ae7e7e067acd569d0e8
https://hdl.handle.net/10453/125177
https://hdl.handle.net/10453/125177
Molecular beam epitaxy (MBE) growth of thin (∼2 μm) CdTe layers characterized by high crystal quality and low defect density on lattice mismatched substrates, such as GaAs and Si, has thus far been difficult to achieve. In this work, we report the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::964caaa3deaa9e735d656a6a5ab507d9
http://hdl.handle.net/11147/6006
http://hdl.handle.net/11147/6006
Spectroscopic ellipsometry (SE) ranging from 1.24 eV to 5.05 eV is used to obtain the film thickness and optical properties of high index (211) CdTe films. A three-layer optical model (oxide/CdTe/GaAs) was chosen for the ex-situ ellipsometric data an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5d06e85e6d6177a210debd501449227
http://hdl.handle.net/11147/6078
http://hdl.handle.net/11147/6078
Publikováno v:
Journal of Applied Physics. 124:085710
We study threading dislocation (TD) density of high-quality cadmium telluride (CdTe) layers grown on a (211) oriented GaAs substrate by molecular beam epitaxy. High-resolution X-ray diffraction was performed to calculate the density of screw-type TDs
Publikováno v:
Materials Research Express. 4:035904
We examine high quality, single crystal CdTe epilayer grown by molecular beam epitaxy (MBE) on (2 1 1)B GaAs substrate using both positions and full width at half maximums (FWHMs) of reciprocal lattice points (RLPs). Our results demonstrate that reci