Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Owen K. Wu"'
Autor:
John E. Jensen, Terry De Lyon, Sanghamitra Sen, Bill Johnson, Bonnie A. Baumgratz, Rajesh D. Rajavel, M. D. Jack, George R. Chapman, Ken Kosai, B. Walker, Owen K. Wu
Publikováno v:
Journal of Electronic Materials. 26:488-492
HgCdTe is an attractive material for room-temperature avalanche photodetectors (APDs) operated at 1.3–1.6 µm wavelengths for fiber optical communication applications because of its bandgap tunability and the resonant enhancement of hole impact ion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8eed8e62970ee85b96ccf567cc53aa36
https://doi.org/10.1007/s11664-997-0182-9
https://doi.org/10.1007/s11664-997-0182-9
Publikováno v:
Materials Chemistry and Physics. 43:103-107
II–VI materials have numerous optoelectronic applications such as HgCdTe for IR imaging and ZnSe for full color flat panel, optical recording and under-water communications. p-Type doping in II–VI materials was one of the major technological hurd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c1b943c7b249c6838b92f00265db248
https://doi.org/10.1016/0254-0584(95)01614-z
https://doi.org/10.1016/0254-0584(95)01614-z
Autor:
Scott M. Johnson, K. Kosai, C. A. Cockrum, Owen K. Wu, G. S. Kamath, Jeffrey M. Peterson, George R. Chapman, D. M. Jamba
Publikováno v:
Journal of Electronic Materials. 24:423-429
HgCdTe MBE technology is becoming a mature growth technology for flexible manufacturing of short-wave, medium-wave, long-wave, and very long-wave infrared focal plane arrays. The main reason that this technology is getting more mature for device appl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e54a2f53d38cdddd01c492d0797a0a6
https://doi.org/10.1007/bf02657943
https://doi.org/10.1007/bf02657943
Publikováno v:
Journal of Crystal Growth. 127:365-370
Electrical doping of II–VI compound semiconductors is a major issue in MBE growth, especially the p-type doping. In this paper, we will report on the molecular beam epitaxial growth and properties of In- (n-type) and As- (p-type) doped HgCdTe alloy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a52df27f0d4bab12b05b25d524cba40
https://doi.org/10.1016/0022-0248(93)90640-i
https://doi.org/10.1016/0022-0248(93)90640-i
Publikováno v:
Journal of Crystal Growth. 101:96-99
HgTe/HgCdTe superlattices are under development as a new infrared material for long wavelength IR applications. We report the molecular beam epitaxial growth of high quality HgTe/HgCdTe superlattices and the dependence of interface quality, electrica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::700c01727c9d03c14c4182aae325a133
https://doi.org/10.1016/0022-0248(90)90944-g
https://doi.org/10.1016/0022-0248(90)90944-g
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:1034-1038
Chemical doping of HgCdTe is an important issue in II–VI compound semiconductors. In this paper, we will report on the molecular‐beam epitaxy (MBE) growth and characterization of n‐ and p‐type HgCdTe. We have grown n‐ and p‐type layers of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69025181aabd9e5189405d80eb4f4c89
https://doi.org/10.1116/1.577001
https://doi.org/10.1116/1.577001
Autor:
G. M. Venzor, Owen K. Wu, Rajesh D. Rajavel, John E. Jensen, Scott M. Johnson, C. A. Cockrum, J. A. Vigil, Terence J. de Lyon
Publikováno v:
SPIE Proceedings.
Significant progress has been made in the technology for MBE growth of HgCdTe infrared focal-plane arrays on Si substrates since the initial demonstration of MBE HgCdTe-on- Si heteroepitaxy in 1989. In 1995, the first all-MBE-grown detector arrays on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebe30f038eadebc48c0c004629fb5488
https://doi.org/10.1117/12.255165
https://doi.org/10.1117/12.255165
Autor:
Kadri Vural, R. G. Benz, Lester J. Kozlowski, A. Parikh, James R. Waterman, Scott M. Johnson, C. A. Cockrum, Art Simmons, J. D. Benson, M. J. Bevan, Owen K. Wu, K. A. Harris, Rajesh D. Rajavel, Christopher J. Summers, Jose M. Arias, G. M. Venzor, Steven R. Jost, John E. Jensen, Majid Zandian, H.-D. Shih, J. A. Dodge, Jagmohan Bajaj, Brent K. Wagner, G. S. Kamath, John H. Dinan, S. D. Pearson, Roger E. DeWames
Publikováno v:
SPIE Proceedings.
To achieve the DoD objective of low cost high performance infrared focal plane arrays a manufacturing technique is required which is intrinsically flexible with respect to device configuration and cutoff wavelength and easily scaleable with respect t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9d2ec447fb1e2fd4aeed2275389bf9d
https://doi.org/10.1117/12.243457
https://doi.org/10.1117/12.243457
Autor:
J. E. Jensen, Rajesh D. Rajavel, Jerry A. Wilson, Owen K. Wu, G. M. Venzor, E. A. Patten, George R. Chapman, W. A. Radford, Scott M. Johnson, C. A. Cockrum, Delyon Terence J
Publikováno v:
Photodetectors: Materials and Devices.
HgCdTe MBE technology offers many advantages for the growth of multi-layer heterojunction structures for high performance IRFPAs. This paper reports data on major advances towards the fabrication of advanced detector structures, which have been made
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d127e5631da836a09561a847a7bda91
https://doi.org/10.1117/12.237708
https://doi.org/10.1117/12.237708
Autor:
Rajesh D. Rajavel, Owen K. Wu, G. M. Venzor, Scott M. Johnson, C. A. Cockrum, Terence J. de Lyon
Publikováno v:
SPIE Proceedings.
Molecular-beam epitaxy (MBE) has been utilized to deposit single crystal epitaxial films of CdTe(112)B and HgCdTe(112)B directly onto Si(112) substrates without the use of GaAs interfacial layers. The films have been characterized with x-ray diffract
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9021e098776457b0ebf434e32da8b996
https://doi.org/10.1117/12.218189
https://doi.org/10.1117/12.218189