Výsledky vyhledávání - "Owen, M. H. S."

Report

Low voltage control of ferromagnetism in a semiconductor p-n junction

Autor: Owen, M. H. S., Wunderlich, J., Novak, V., Olejnik, K., Zemen, 3 J., Vyborny, K., Ogawa, S., Irvine, A. C., Ferguson, A. J., Sirringhaus, H., Jungwirth, T.

The concept of low-voltage depletion and accumulation of electron charge in semiconductors, utilized in field-effect transistors (FETs), is one of the cornerstones of current information processing technologies. Spintronics which is based on manipula

Externí odkaz: http://arxiv.org/abs/0807.0906

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Report

Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study

Autor: Olejnik, K., Owen, M. H. S., Novak, V., Masek, J., Irvine, A. C., Wunderlich, J., Jungwirth, T.

(Ga,Mn)As and related diluted magnetic semiconductors play a major role in spintronics research because of their potential to combine ferromagnetism and semiconducting properties in one physical system. Ferromagnetism requires ~1-10% of substitutiona

Externí odkaz: http://arxiv.org/abs/0802.2080

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Conference

LOW VOLTAGE CONTROL OF FERROMAGNETISM IN A SEMICONDUCTOR P-N JUNCTION.

Autor: WUNDERLICH, J., OWEN, M. H. S., IRVINE, A. C., OGAWA, S., VYBORNY, K., OLEJNIK, K., JUNGWIRTH, T.

Publikováno v: Foundations of Quantum Mechanics in the Light of New Technology: Isqm-Tokyo '08 - Proceedings of the 9th International Symposium; 2009, p124-130, 7p