Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Ovidiu Profirescu"'
Publikováno v:
Electronics
Volume 12
Issue 3
Pages: 507
Volume 12
Issue 3
Pages: 507
Improved performance operational amplifier demand has continuously increased. IC designers use the charge pump technique as an advanced solution to implement the amplifier’s rail−to−rail input stage, but the need for a large load capacitor is a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::252e5129e325ceaa3bcd9c5e025fd5c6
Autor:
Eduard Franti, Monica Dascalu, Lidia Dobrescu, C. Vasilache, Dragos Dobrescu, Ovidiu Profirescu
Publikováno v:
2019 International Semiconductor Conference (CAS).
This paper presents an electronic circuit that processes signal for electronic spirometers. Internal structure and the main circuits are described. The whole system has been built around a pressure sensor. The circuit has been implemented and the res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ede6a4dee46b8223dae8011fd1ab8b91
https://doi.org/10.1109/smicnd.2019.8923878
https://doi.org/10.1109/smicnd.2019.8923878
Publikováno v:
CAS 2012 (International Semiconductor Conference).
The paper presents a new improved integrated charge pump based on the use of both enhanced and depletion MOS transistors as active switches and charge transfer devices in order to accommodate the voltage class requirements specific to the BCD technol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfa8374493efcfe19ae9149b1c77bd12
https://doi.org/10.1109/smicnd.2012.6400737
https://doi.org/10.1109/smicnd.2012.6400737
Publikováno v:
CAS 2011 Proceedings (2011 International Semiconductor Conference).
This paper presents an external control technique for the current limit in LDOs. Using an external resistor, the user can change the current limit within wide domain. This is possible by using a special block which generates the current reference for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae3ed60417dbd095f9929aee070786aa
https://doi.org/10.1109/smicnd.2011.6095833
https://doi.org/10.1109/smicnd.2011.6095833
Publikováno v:
CAS 2010 Proceedings (International Semiconductor Conference).
This paper presents an adjustable 300mA CMOS LDO built in a double-metal 0.5µm 16V CMOS technology. It uses a low-current bandgap which needs only 1.5µA. It includes a symmetrical op amp configured as voltage follower, having a built-in adaptive bi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a6c2f4671adc641da2430c2375960e1
https://doi.org/10.1109/smicnd.2010.5650532
https://doi.org/10.1109/smicnd.2010.5650532
Publikováno v:
2009 International Semiconductor Conference.
The paper presents a 0.5A fast response CMOS LDO built in a double-metal 0.5µm 5.5V CMOS technology. It includes a symmetrical op amp configured as voltage follower, having a built-in adaptive bias behavior. The frequency compensation is cascode-Mil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72decaaa4aa3e40fb62995a8c66dd1e0
https://doi.org/10.1109/smicnd.2009.5336674
https://doi.org/10.1109/smicnd.2009.5336674
Publikováno v:
2007 International Semiconductor Conference.
The paper presents the main noise sources in CMOS low dropout linear voltage regulators (LDOs), their simulation and measurement. The paper is focused on noise performance, which is of great importance for the design of CMOS circuits.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5634f9fe874e5371bdbd91da3209464
https://doi.org/10.1109/smicnd.2007.4519786
https://doi.org/10.1109/smicnd.2007.4519786
Autor:
N. Dumbravescu, U. Dumitru, M.D. Profirescu, Elena Manea, Florin Babarada, Cristian Ravariu, Ovidiu Profirescu, Camelia Dunare
Publikováno v:
CAS 2005 Proceedings. 2005 International Semiconductor Conference, 2005..
The nanotechnology trend needs more precisely models for active devices. From this point of view the design of linear analog circuits lacks models for state-of-the-art MOS transistors to accurately describe the conductance and distortion effects. Thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b851cab4777c917f5019a57777f62bac
https://doi.org/10.1109/smicnd.2005.1558821
https://doi.org/10.1109/smicnd.2005.1558821