Zobrazeno 1 - 10
of 286
pro vyhledávání: '"Ovchinnikov, Dmitry"'
Autor:
Clements, Eleanor M., Ovchinnikov, Dmitry, Raghuvanshi, Parul R., Cooper, Valentino R., Okamoto, Satoshi, Christianson, Andrew D., Paddison, Joseph A. M., Ortiz, Brenden R., Calder, Stuart, May, Andrew F., Xu, Xiaodong, Yan, Jiaqiang, McGuire, Michael A.
Cleavable metallic antiferromagnets may be of use for low-dissipation spintronic devices; however, few are currently known. Here we present orthorhombic MnRhBi3 as one such compound and present a thorough study of its physical properties. Exfoliation
Externí odkaz:
http://arxiv.org/abs/2407.00690
Autor:
Zhang, Shuai, Fonseca, Jordan, Bennett, Daniel, Sun, Zhiyuan, Zhang, Junhe, Jing, Ran, Xu, Suheng, He, Leo, Moore, S. L., Rossi, S. E., Ovchinnikov, Dmitry, Cobden, David, Jarillo-Herrero, Pablo., Fogler, M. M., Kim, Philip, Kaxiras, Efthimios, Xu, Xiaodong, Basov, D. N.
Plasmon polaritons are formed by coupling light with delocalized electrons. The half-light and half-matter nature of plasmon polaritons endows them with unparalleled tunability via a range of parameters, such as dielectric environments and carrier de
Externí odkaz:
http://arxiv.org/abs/2406.18028
Autor:
Cenker, John, Ovchinnikov, Dmitry, Yang, Harvey, Chica, Daniel G., Zhu, Catherine, Cai, Jiaqi, Diederich, Geoffrey, Liu, Zhaoyu, Zhu, Xiaoyang, Roy, Xavier, Cao, Ting, Daniels, Matthew W., Chu, Jiun-Haw, Xiao, Di, Xu, Xiaodong
The magnetic tunnel junction (MTJ) is a backbone device for spintronics. Realizing next generation energy efficient MTJs will require operating mechanisms beyond the standard means of applying magnetic fields or large electrical currents. Here, we de
Externí odkaz:
http://arxiv.org/abs/2301.03759
Autor:
Zhang, Yinong, Xiao, Chengxin, Ovchinnikov, Dmitry, Zhu, Jiayi, Wang, Xi, Taniguchi, Takashi, Watanabe, Kenji, Yan, Jiaqiang, Yao, Wang, Xu, Xiaodong
Monolayer semiconducting transition metal dichalcogenides possess broken inversion symmetry and strong spin-orbit coupling, which leads to unique spin-valley locking effect. In 2H stacked pristine multilayers, the spin-valley locking yields an electr
Externí odkaz:
http://arxiv.org/abs/2212.14140
Autor:
Fonseca, Jordan, Diederich, Geoffrey M., Ovchinnikov, Dmitry, Cai, Jiaqi, Wang, Chong, Yan, Jiaqiang, Xiao, Di, Xu, Xiaodong
MnBi2Te4 is a van der Waals topological insulator with intrinsic intralayer ferromagnetic exchange and A-type antiferromagnetic interlayer coupling. Theoretically, it belongs to a class of structurally centrosymmetric crystals whose layered antiferro
Externí odkaz:
http://arxiv.org/abs/2212.06890
Autor:
Cai, Jiaqi, Ovchinnikov, Dmitry, Fei, Zaiyao, He, Minhao, Song, Tiancheng, Lin, Zhong, Wang, Chong, Cobden, David, Chu, Jiun-Haw, Cui, Yong-Tao, Chang, Cui-Zu, Xiao, Di, Yan, Jiaqiang, Xu, Xiaodong
The interplay between band topology and magnetism can give rise to exotic states of matter. For example, magnetically doped topological insulators can realize a Chern insulator that exhibits quantized Hall resistance at zero magnetic field. While pri
Externí odkaz:
http://arxiv.org/abs/2107.04626
Autor:
Zhao, Yi-Fan, Zhou, Ling-Jie, Wang, Fei, Wang, Guang, Song, Tiancheng, Ovchinnikov, Dmitry, Yi, Hemian, Mei, Ruobing, Wang, Ke, Chan, Moses H. W., Liu, Chao-Xing, Xu, Xiaodong, Chang, Cui-Zu
Publikováno v:
Nano Lett. 21, 7691(2021)
A central theme in condensed matter physics is to create and understand the exotic states of matter by incorporating magnetism into topological materials. One prime example is the quantum anomalous Hall (QAH) state. Recently, MnBi2Te4 has been demons
Externí odkaz:
http://arxiv.org/abs/2106.13772
Autor:
Ovchinnikov, Dmitry, Huang, Xiong, Lin, Zhong, Fei, Zaiyao, Cai, Jiaqi, Song, Tiancheng, He, Minhao, Jiang, Qianni, Wang, Chong, Li, Hao, Wang, Yayu, Wu, Yang, Xiao, Di, Chu, Jiun-Haw, Yan, Jiaqiang, Chang, Cui-Zu, Cui, Yong-Tao, Xu, Xiaodong
The interplay between band topology and magnetic order plays a key role in quantum states of matter. MnBi2Te4, a van der Waals magnet, has recently emerged as an exciting platform for exploring Chern insulator physics. Its layered antiferromagnetic o
Externí odkaz:
http://arxiv.org/abs/2011.00555
Akademický článek
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Publikováno v:
In Transportation Research Procedia 2023 68:717-725