Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Oulin Yu"'
Autor:
Sujatha Vijayakrishnan, F. Poitevin, Oulin Yu, Z. Berkson-Korenberg, M. Petrescu, M. P. Lilly, T. Szkopek, Kartiek Agarwal, K. W. West, L. N. Pfeiffer, G. Gervais
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-6 (2023)
Abstract We report low-temperature electronic transport measurements performed in two multi-terminal Corbino samples formed in GaAs/Al-GaAs two-dimensional electron gases (2DEG) with both ultra-high electron mobility ( ≳ 20 × 106 cm2/ Vs) and with
Externí odkaz:
https://doaj.org/article/38ad440e952f4c3495b2898b9318e6f1
Autor:
Guillaume Gervais, Maurizio Peruzzini, Matei Petrescu, N. Hemsworth, Stefan Heun, Manuel Serrano-Ruiz, Oulin Yu, Matteo Carrega, Thomas Szkopek, David Graf, William Dickerson, Francesca Telesio, Maria Caporali, V. Tayari
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters
Physica status solidi. Rapid research letters
14 (2020). doi:10.1002/pssr.201900347
info:cnr-pdr/source/autori:Telesio F.; Hemsworth N.; Dickerson W.; Petrescu M.; Tayari V.; Yu O.; Graf D.; Serrano-Ruiz M.; Caporali M.; Peruzzini M.; Carrega M.; Szkopek T.; Heun S.; Gervais G./titolo:Nonclassical Longitudinal Magnetoresistance in Anisotropic Black Phosphorus/doi:10.1002%2Fpssr.201900347/rivista:Physica status solidi. Rapid research letters (Print)/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:14
Physica status solidi. Rapid research letters
14 (2020). doi:10.1002/pssr.201900347
info:cnr-pdr/source/autori:Telesio F.; Hemsworth N.; Dickerson W.; Petrescu M.; Tayari V.; Yu O.; Graf D.; Serrano-Ruiz M.; Caporali M.; Peruzzini M.; Carrega M.; Szkopek T.; Heun S.; Gervais G./titolo:Nonclassical Longitudinal Magnetoresistance in Anisotropic Black Phosphorus/doi:10.1002%2Fpssr.201900347/rivista:Physica status solidi. Rapid research letters (Print)/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:14
Resistivity measurements of a few-layer black phosphorus (bP) crystal in parallel magnetic fields up to 45 T are reported as a function of the angle between the in-plane field and the source-drain (S-D) axis of the device. The crystallographic direct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a877622a263f35af504b40143036c585
http://arxiv.org/abs/1808.00858
http://arxiv.org/abs/1808.00858