Zobrazeno 1 - 10
of 1 496
pro vyhledávání: '"Ougazzaden A"'
Autor:
Ottapilakkal, Vishnu, Juyal, Abhishek, Sundaram, Suresh, Vuong, Phuong, Beck, Collin, Dudeck, Noel L., Bencherif, Amira, Loiseau, Annick, Fossard, Frédéric, Mérot, Jean-Sebastien, Chapron, David, Kauffmann, Thomas H., Salvestrini, Jean-Paul, Voss, Paul L., de Heer, Walt A., Berger, Claire, Ougazzaden, Abdallah
Hexagonal boron nitride encapsulation is the method of choice for protecting graphene from environmental doping and impurity scattering. It was previously demonstrated that metal-organic vapor phase epitaxy (MOVPE) grows epitaxially ordered, uniform
Externí odkaz:
http://arxiv.org/abs/2409.04709
Autor:
Tijent, Fatima Z., Faqir, Mustapha, Voss, Paul L., Salvestrini, Jean-Paul, Ougazzaden, Abdallah
Publikováno v:
Materials Science and Engineering: B, 301, 117185 (2024)
In this article, we investigate through numerical simulation the reduction of self-heating effects (SHEs) in GaN HEMT via the integration of hexagonal boron nitride (h-BN) as a passivation layer and as a release layer to transfer GaN HEMT to diamond
Externí odkaz:
http://arxiv.org/abs/2401.14880
Autor:
Tran, T.M., Kassem, A., Ottapilakkal, V., Vuong, P., Gujrati, R., Bourras, M., Srivastava, A., Perepeliuc, A., Moudakir, T., Gautier, S., Bouchoule, S., Tchernycheva, M., Voss, P.L., Sundaram, S., Salvestrini, J.P., Ougazzaden, A.
Publikováno v:
In Journal of Crystal Growth 15 January 2025 650
Autor:
Gigliotti, James, Li, Xin, Sundaram, Suresh, Deniz, Dogukan, Prudkovskiy, Vladimir, Turmaud, Jean-Philippe, Hu, Yiran, Hu, Yue, Fossard, Frédéric, Mérot, Jean-Sébastien, Loiseau, Annick, Patriarche, Gilles, Yoon, Bokwon, Landman, Uzi, Ougazzaden, Abdallah, Berger, Claire, de Heer, Walt A.
Publikováno v:
ACS Nano 2020, 14, 12962
Realizing high-performance nanoelectronics requires control of materials at the nanoscale. Methods to produce high quality epitaxial graphene (EG) nanostructures on silicon carbide are known. The next step is to grow Van der Waals semiconductors on t
Externí odkaz:
http://arxiv.org/abs/2011.11184
Akademický článek
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Autor:
Li, Kuang-Hui, Torres-Castanedo, Carlos G., Sundaram, Suresh, Sun, Haiding, Braic, Laurentiu, Hedhili, Mohamed N., Ougazzaden, Abdallah, Li, Xiaohang
h-BN and Ga2O3 are two promising semiconductor materials. However, the band alignment of the Ga2O3/h-BN heterojunction has not been identified, hindering device development. In this study, the heterojunction was prepared by metalorganic chemical vapo
Externí odkaz:
http://arxiv.org/abs/1906.06891
Autor:
Gujrati, Rajat, Karrakchou, Soufiane, Oliverio, Lucas, Sundaram, Suresh, Voss, Paul L., Monroy, Eva, Salvestrini, Jean Paul, Ougazzaden, Abdallah
Publikováno v:
In Micro and Nanostructures April 2023 176
Autor:
Ottapilakkal, V., Juyal, A., Sundaram, S., Vuong, P., Mballo, A., Beck, L., Nunn, G., Su, Y., Loiseau, A., Fossard, F., Mérot, J.S., Chapron, D., Kauffmann, T.H., Salvestrini, J.P., Voss, P.L., de Heer, W.A., Berger, C., Ougazzaden, A.
Publikováno v:
In Journal of Crystal Growth 1 February 2023 603
Autor:
Ahaitouf, Ali, El-yahyaoui, Sara, Elhimer, Sarah, El-Ayane, Salima, Salvestrini, Jean-Paul, Ougazzaden, Abdallah
Publikováno v:
In Energy Conversion and Management: X December 2022 16
Autor:
Srivastava, Ashutosh, Mballo, Adama, Sundaram, Suresh, Ottapilakkal, Vishnu, Vuong, Phuong, Karrakchou, Soufiane, Kumar, Mritunjay, Li, Xiaohang, Halfaya, Yacine, Gautier, Simon, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah
Publikováno v:
Physica Status Solidi. A: Applications & Materials Science; Nov2024, Vol. 221 Issue 21, p1-6, 6p