A new normalized direct conductance method for observation of Poole-Frenkel current

Autor: Aounallah, Belkhir, Rouag, Nouari, Ouennoughi, Zahir, Ortiz-Conde, Adelmo

Publikováno v: In Solid State Electronics August 2022 194

New study of the abnormal behavior of the low temperature dependence of the current in inhomogeneous Schottky diode.

Autor: Latreche, Abdelhakim¹, Ouennoughi, Zahir²

Publikováno v: International Journal of Numerical Modelling. Mar2015, Vol. 28 Issue 2, p231-238. 8p.

Modélisation des phénomènes de transport dans les structures MOS

Autor: Bourouba, Farid, Ouennoughi, Zahir

The race for miniaturization of integrated circuits causes the appearance of anumber of parasitics effects, from degrading the electricals characteristics of thedevices. These are the gate leakage increasing with the reduction of the dielectricthickn

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2592::26d4dbcbec246cc2fe3b6b5ee36c81a0
https://theses.hal.science/tel-01774538

Au/Mn5Ge3/n-Ge(111) Schottky barrier characteristics from I-V-T and C-V-T data

Autor: Sellai, Azzouz, Ouennoughi, Zahir, Le Thanh, Vinh, Petit, Matthieu, Michez, Lisa, Mesli, Abdelmadjid

Publikováno v: 16th IEEE Mediterranean Electrotechnical Conference
16th IEEE Mediterranean Electrotechnical Conference, pp.179--182, 2012, ⟨10.1109/MELCON.2012.6196408⟩

I-V and C-V measurements performed on Au/Mn 5 Ge 3 /n-Ge structures, prepared for spintronic applications, are presented and analysed over a wide range of temperatures (50 K-300 K) with the goal of elucidating the prevailing conduction mechanism(s).

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3430::38660fe5cecf0dd2e9a46e1d5de24843
https://hal.science/hal-04063671

Contribution to the study of physical and electronical properties of metal-insulator-semiconductors : optical and electrical characterization of MIS devices

Autor: Ouennoughi, Zahir

Publikováno v: Autre [cond-mat.other]. Université Henri Poincaré-Nancy 1, 1991. Français. ⟨NNT : 1991NAN10221⟩

Not available
Ce mémoire concerne le problème actuel de la passivation du phosphure d'indium qui est un bon candidat pour les circuits électroniques rapides et optoélectroniques. Pour atteindre cet objectif, un diélectrique mince de 50 à 1

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2592::bd598119da8e1e9ae60b94202c582c80
https://hal.univ-lorraine.fr/tel-01747818