Two dimensional simulation and modeling of the electrical behavior in nanocrystalline silicon thin-film transistors.

Autor: Archontas, N., Georgoulas, N., Dimitriadis, C. A., Templier, F., Oudwan, M., Kamarinos, G.

Publikováno v: Journal of Applied Physics; May2008, Vol. 103 Issue 10, p104507, 7p, 1 Diagram, 2 Charts, 4 Graphs

Above-threshold drain current model including band tail states in nanocrystalline silicon thin-film transistors for circuit implementation.

Autor: Pappas, I., Dimitriadis, C. A., Templier, F., Oudwan, M., Kamarinos, G.

Publikováno v: Journal of Applied Physics; 4/15/2007, Vol. 101 Issue 8, p084506, 4p, 1 Diagram, 3 Graphs

Effect of channel width on the electrical characteristics of amorphous/nanocrystalline silicon bilayer Thin Film Transistors

Autor: Hatzopoulos, A.T., Arpatzanis, N., Tassis, D.H., Dimitriadis, C.A., Templier, F., Oudwan, M., Kamarinos, G.

Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2007, 54 (5), pp.1265-1269

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::10e347d7d1b5550e658c22f86b42d428
https://hal.archives-ouvertes.fr/hal-00392874

Special size effects in advanced single-gate and multiple-gate SOI transistors

Autor: Pappas, I., Dimitriadis, C.A., Templier, F., Oudwan, M., Kamarinos, G.

Publikováno v: J. Telecommunications and Information Technology
J. Telecommunications and Information Technology, 2007, 2, pp.14-24

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::02015cab0740577307d21903eaf25844
https://hal.archives-ouvertes.fr/hal-00393049

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