Application of MEMS behavioral simulation to Physics of Failure (PoF) modeling

Autor: Schmitt, P., Pressecq, F., Lafontan, X., Duong, Q.H., Pons, P., Nicot, J.M., Oudea, C., Estève, D., Fourniols, J.Y., Camon, H.

Publikováno v: In Microelectronics Reliability 2003 43(9):1957-1962

Experimental Analysis of recombination and neutralization of radiation induced charges, using Isochronal Annealing

Autor: Quittard, O., Saigné, F., Joffre, F., Oudea, C., Dusseau, L., Fesquet, J., Gasiot, J.

Publikováno v: 5th European Conference on Radiation and its Effects on Components and Systems (RADECS1999)
5th European Conference on Radiation and its Effects on Components and Systems (RADECS1999), 1999, Fontevreau, France
IEEE-RADECS2000
IEEE-RADECS2000, 2000, Louvain La Neuve, Belgium

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::057625cbb2175902afdbacc85775583f
https://hal.archives-ouvertes.fr/hal-01803889

Single Event Effects in MEMS Accelerometers.

Autor: Oudea, C., Poirot, P., Gaillard, R., Poivey, C., Marchand, L.

Publikováno v: 2009 IEEE Radiation Effects Data Workshop; 2009, p94-98, 5p

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Prediction of long-term thermal behavior of an irradiated SRAM based on isochronal annealing measurements

Autor: Saigné, F., Quittard, O., Dusseau, L., Joffre, F., Oudéa, C., Fesquet, J., Gasiot, J.

Publikováno v: In Microelectronics Reliability 2002 42(3):459-461