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Autor:
Farly Tumimomor, Masrur, Sugianto, Otto Muzikarno, Endang Rancasa, Heriyanto Syafutra, Surianty, Nur Aisyah Nuzulia, Abdul Wahidin Nuayi, Idawati Supu, Irzaman, Tb Gamma Nur Rahman
Publikováno v:
Ferroelectrics. 445:4-17
Ferroelectric BaxSr(1-x)TiO3 thin film semiconductors with Ba/Sr ratio deposited on silicon using chemical solution deposition (CSD) method have been investigated, followed by annealing at 850°C for 15 hours. Observations by I-V meter, LCR meter, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4084574bb2a2f57eb0b4727e001cf617
https://doi.org/10.1080/00150193.2012.742351
https://doi.org/10.1080/00150193.2012.742351
