Zobrazeno 1 - 10
of 406
pro vyhledávání: '"Ossikovski R"'
Autor:
Elbaz, A., Buca, D., Driesch, N. Von den, Pantzas, K., Patriarche, G., Zerounian, N., Herth, E., Checoury, X., Sauvage, S., Sagnes, I., Foti, A., Ossikovski, R., Hartmann, J. -M., Boeuf, F., Ikonic, Z., Boucaud, P., Grutzmacher, D., Kurdi, M. El
GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be employed f
Externí odkaz:
http://arxiv.org/abs/2001.04927
Autor:
Ossikovski R.
Publikováno v:
EPJ Web of Conferences, Vol 5, p 04005 (2010)
The various decompositions of depolarizing Mueller matrices into products of basic optical devices, i.e. retarders, diattenuators and depolarizers, are critically revisited. Both “classic” as well as recently proposed factorizations are overviewe
Externí odkaz:
https://doaj.org/article/7e8ef35e9d874a069b220f1cd3c18e2c
Publikováno v:
EPJ Web of Conferences, Vol 5, p 06002 (2010)
Raman spectroscopy is widely used in many areas of research and technology such as chemical analysis and material properties characterization. “Classic” Raman spectroscopy traditionally neglecting the polarization-of-light aspect, polarized Raman
Externí odkaz:
https://doaj.org/article/7afa25a9adf74b8282d6ea23839fbbb6
Autor:
Bugami, B. Al, Su, Y., Rodríguez, C., Lizana, A., Campos, J., Durfort, M., Ossikovski, R., Garcia-Caurel, E.
Publikováno v:
In Thin Solid Films 1 January 2023 764
Akademický článek
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Autor:
McClarty, M., Jegenyes, N., Gaudet, M., Toccafondi, C., Ossikovski, R., Vaurette, F., Arscott, S., Rowe, A. C. H.
Publikováno v:
Appl. Phys. Lett. 109, 023102 (2016)
A wide variety of apparently contradictory piezoresistance (PZR) behaviors have been reported in p-type silicon nanowires (SiNW), from the usual positive bulk effect to anomalous (negative) PZR and giant PZR. The origin of such a range of diverse phe
Externí odkaz:
http://arxiv.org/abs/1512.01396
Autor:
Vanacore, G. M., Chaigneau, M., Barrett, N., Bollani, M., Boioli, F., Salvalaglio, M., Montalenti, F., Manini, N., Caramella, L., Biagioni, P., Chrastina, D., Isella, G., Renault, O., Zani, M., Sordan, R., Onida, G., Ossikovski, R., Drouhin, H. -J., Tagliaferri, A.
Publikováno v:
Physical Review B 88, 115309 (2013)
Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile strain avoidi
Externí odkaz:
http://arxiv.org/abs/1306.1412
Akademický článek
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Publikováno v:
In Thin Solid Films 30 June 2013 537:145-148
Autor:
Ivanov, D. (Deyan), Dremin, V. (Viktor), Genova, T. (Tsanislava), Bykov, A. (Alexander), Novikova, T. (Tatiana), Ossikovski, R. (Razvigor), Meglinski, I. (Igor)
In biophotonics, novel techniques and approaches are being constantly sought to assist medical doctors and to increase both sensitivity and specificity of the existing diagnostic methods. In such context, tissue polarimetry holds promise to become a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::35f31c72082ddd022e3559284f4a95df
https://zenodo.org/record/6394848
https://zenodo.org/record/6394848