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pro vyhledávání: '"Osseiran, Majd"'
Autor:
Olgun, Ataberk, Osseiran, Majd, Yaglikci, Abdullah Giray, Tugrul, Yahya Can, Luo, Haocong, Rhyner, Steve, Salami, Behzad, Luna, Juan Gomez, Mutlu, Onur
We experimentally demonstrate the effects of read disturbance (RowHammer and RowPress) and uncover the inner workings of undocumented read disturbance defense mechanisms in High Bandwidth Memory (HBM). Detailed characterization of six real HBM2 DRAM
Externí odkaz:
http://arxiv.org/abs/2310.14665
Autor:
Olgun, Ataberk, Osseiran, Majd, Ya{ğ}lık{c}ı, Abdullah Giray, Tuğrul, Yahya Can, Luo, Haocong, Rhyner, Steve, Salami, Behzad, Luna, Juan Gomez, Mutlu, Onur
RowHammer (RH) is a significant and worsening security, safety, and reliability issue of modern DRAM chips that can be exploited to break memory isolation. Therefore, it is important to understand real DRAM chips' RH characteristics. Unfortunately, n
Externí odkaz:
http://arxiv.org/abs/2305.17918