Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Osman Seckin Simsek"'
Publikováno v:
IPDPS Workshops
2018 IEEE International Parallel and Distributed Processing Symposium Workshops (IPDPSW)
2018 IEEE International Parallel and Distributed Processing Symposium Workshops (IPDPSW)
Writing programs for heterogeneous platforms is challenging, since programmers must deal with multiple programming models, partition work for CPUs and accelerators with different compute capabilities, and manage memory in multiple distinct address sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ce86f50f4c0746abe4bebd08c9a3b68
https://doi.org/10.1109/ipdpsw.2018.00093
https://doi.org/10.1109/ipdpsw.2018.00093
Autor:
Yakup Murat Mert, Osman Seckin Simsek
Publikováno v:
ISQED
Dynamic body-biasing is a well studied approach for reducing the leakage power in memory systems. Proposed designs dynamically change the body bias of the inactive memory cells in order to tune their threshold voltages. However, prior body biasing sc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a320fd57b3f330ee3d114d2f3b3fb027
https://aperta.ulakbim.gov.tr/record/100293
https://aperta.ulakbim.gov.tr/record/100293
Publikováno v:
VLSI-SoC
SRAM arrays are used especially in memory structures inside the processor. Static energy dissipation caused by leakage currents is increasing with every new technology and large SRAM arrays are the main source of the leakage current. We analyzed the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5be1ad5e9b4402aef70b40a90c07e6cb
https://doi.org/10.1109/vlsi-soc.2013.6673279
https://doi.org/10.1109/vlsi-soc.2013.6673279
Publikováno v:
2011 IEEE 29th International Conference on Computer Design (ICCD).
Static energy dissipation is an increasing problem in contemporary processor design with shrinking feature sizes. Many schemes are proposed to cope with leakage in the literature ranging from using sleep transistors to lowering supply voltage. In thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aab3c530c9c9932c3179adea93e9f80b
https://doi.org/10.1109/iccd.2011.6081375
https://doi.org/10.1109/iccd.2011.6081375