Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Osman Lotfy Elsayed"'
Publikováno v:
Progress In Electromagnetics Research. 92:299-315
This paper presents a method to construct composite right/left-handed transmission line using coupled lines. A general procedure to design a composite right/left-handed unit cell is presented. The procedure was used on a specific coupled line configu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b4563597dc67a965f57f768aa162a19
https://doi.org/10.2528/pier09040305
https://doi.org/10.2528/pier09040305
Publikováno v:
Progress In Electromagnetics Research Letters. 11:39-46
This paper presents a realization of composite right/left handed transmission lines using coupled microstrip lines. This structure exploits the advantages of the microstrip lines, while increases the coupling by a ∞oating conductor at the ground pl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a7aadae163c44d83c8473934450724a
https://doi.org/10.2528/pierl09080901
https://doi.org/10.2528/pierl09080901
Publikováno v:
Solid-State Electronics. 38:917-929
A hydrodynamic energy model is efficiently used for the simulation of a dual-gate lattice matched MODFET at room temperature. The results obtained give a good insight of the device physics and permit through the systematic use of the model to predict
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d51bbe5d1aacfe5ea6325c21f712524a
https://doi.org/10.1016/0038-1101(94)00171-b
https://doi.org/10.1016/0038-1101(94)00171-b
Publikováno v:
2009 IEEE Antennas and Propagation Society International Symposium.
Broadside coupled coplanar waveguides are used to realize a composite right/left-handed transmission line, which is characterized by antiparallel group and phase velocities. The transmission line design depends on the electromagnetic coupling between
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea15c9af9821b8e52d034494e5b445cc
https://doi.org/10.1109/aps.2009.5172118
https://doi.org/10.1109/aps.2009.5172118
Publikováno v:
IEEE Transactions on Electron Devices. 37:21-30
Using a two-dimensional hydrodynamic energy model incorporating nonstationary electron dynamics and nonisothermal electron transport (which characterizes submicron-gate MODFETs), the main physical phenomena that govern the device performance at 300 K
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd37ac542c37ac0de2693ef0eb3cd17c
https://doi.org/10.1109/16.43796
https://doi.org/10.1109/16.43796
Publikováno v:
Simulation of Semiconductor Devices and Processes ISBN: 9783709173725
In this work we present an enhanced two dimensional hydrodynamic energy model used for the simulation of complex heterostructure field effect transistors. We highlight its capabilities and potential performance using the state of art computational te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76439f5945fe1dc7d6b953a9c0b3154d
https://doi.org/10.1007/978-3-7091-6657-4_113
https://doi.org/10.1007/978-3-7091-6657-4_113
Publikováno v:
Canadian Journal of Physics. 63:727-731
The potential performance improvement achieved by reducing the gate length of GaAs MESFET's below 0.25 μm is investigated using a novel two-dimensional nonlocal numerical model. The charge, potential, and electron energy distributions in three devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::268b2cb86a2020ba321df7b3ae7f6518
https://doi.org/10.1139/p85-115
https://doi.org/10.1139/p85-115
Publikováno v:
IEEE Transactions on Electron Devices. 35:824-830
The surface potential effect in GaAs MESFETs causes a depleted zone to form not only between the source and gate, but also between the gate and drain. The consequences of this phenomenon on the device behavior, the DC and AC characteristics, and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dcd13f5dc1b68257fe4250966a19a1c
https://doi.org/10.1109/16.3332
https://doi.org/10.1109/16.3332
Publikováno v:
Solid-State Electronics. 30:643-654
A novel 2-D numerical model incorporating nonstationary electron dynamics is used to investigate the complex transport phenomena governing the operation of sub-micron gate GaAs MESFET's. A detailed theoretical analysis of different phenomena observed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7c0e2107b234ee6843c9afdd8c8a99b
https://doi.org/10.1016/0038-1101(87)90224-3
https://doi.org/10.1016/0038-1101(87)90224-3
Autor:
Osman Lotfy Elsayed
Publikováno v:
12th European Microwave Conference, 1982.
Starting from the "cascode" model of the dual gate microwave MESFET an analysis of its performance as a mixer is carried. In this approach, the modulation of the transconductance of the second FET as well as the "drain" resistance of the first FET by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff6bfd21a700337552ff34a50562ab16
https://doi.org/10.1109/euma.1982.333104
https://doi.org/10.1109/euma.1982.333104