Zobrazeno 1 - 10
of 65
pro vyhledávání: '"Osiyuk, I.N."'
Autor:
Nazarov, A.N., Vovk, J.N., Osiyuk, I.N., Tkachenko, A.S., Tyagulskii, I.P., Lysenko, V.S., Gebel, T., Rebohle, L., Skorupa, W., Yankov, R.A.
Publikováno v:
In Materials Science & Engineering B 2005 124:458-461
Publikováno v:
In Solid State Electronics 2005 49(4):545-553
Publikováno v:
In Microelectronics Reliability 2002 42(9):1461-1464
Autor:
Lysenko, V.S *, Nazarov, A.N, Kilchytska, V.I, Osiyuk, I.N, Tyagulski, I.P, Gomeniuk, Yu.V, Barchuk, I.P
Publikováno v:
In Solid State Electronics 2001 45(4):575-584
Publikováno v:
In Microelectronics Reliability 1 April 2000 40(4-5):799-802
Autor:
Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.M., Rebohle, L., Skorupa, W.
In this paper, we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺ and C⁺ ions. The implanting fluencies were chosen in such a way that the peak concentration
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::1eae3cd491f743cffdaa8b50b8639cd6
http://dspace.nbuv.gov.ua/handle/123456789/118612
http://dspace.nbuv.gov.ua/handle/123456789/118612
Autor:
Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.N., Rebohle, L., Skorupa, W.
In this paper we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺ and C⁺ ions. The implanting fluencies were chosen in such a way that the peak concentration o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::91ec6198ca68aa5f688b454849784a5d
http://dspace.nbuv.gov.ua/handle/123456789/119072
http://dspace.nbuv.gov.ua/handle/123456789/119072
The results of experiments on the influence of recharging the electron traps in a Si-SiO₂ transition layer on the low-temperature characteristics of fully depleted silicon in insulator MOSFET devices are presented. It is shown that the low-dose gam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::34d8fdbf7dcb4f2e0fa787f8872fa2ee
http://dspace.nbuv.gov.ua/handle/123456789/117890
http://dspace.nbuv.gov.ua/handle/123456789/117890
Forward and reverse currents in the heterostructure “amorphous SiC/p-Si” were studied in the temperature range 30 – 80 K. It has been found that in different ranges of the applied voltage the transport current is described by different mechanis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::8426589f83bc037be4aec206645c3ab9
http://dspace.nbuv.gov.ua/handle/123456789/121165
http://dspace.nbuv.gov.ua/handle/123456789/121165
Autor:
Gomeniuk, Y.V., Lysenko, V.S., Osiyuk, I.N., Tyagulski, I.P., Valakh, M.Ya., Yukhimchuk, V.A., Willander, M., Patel, C.J.
A comprehensive electrical characterisation of the SiGe/Si heterostructures has been performed in the wide temperature range (10270 K). Four structures fabricated by the Ge⁺ ion implantation technique at different substrate temperatures (room tempe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::34cd74ac073ccd79de671f26f3c73710
http://dspace.nbuv.gov.ua/handle/123456789/119871
http://dspace.nbuv.gov.ua/handle/123456789/119871