Zobrazeno 1 - 10
of 105
pro vyhledávání: '"Osinskii, A."'
Autor:
V. I. Osinskii, N. M. Liahova, A. V. Osinskii, Marat Serhiiovych Onachenko, Andrii Volodymyrovych Diagilev, I. V. Masol
Publikováno v:
Electronics and Communications. 21:10-21
Рассмотрены структурные и технологические аспекты поляризации многокомпонентных твердых растворов соединений А 3 В 5 , в частности, три
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5cd9404c296b035221cce11db25a30f
https://doi.org/10.20535/2312-1807.2016.21.6.79190
https://doi.org/10.20535/2312-1807.2016.21.6.79190
Autor:
Osinskii, V. I., Masol, I. V., Liahova, N. M., Osinskii, A. V., Diagilev, Andrii Volodymyrovych, Onachenko, Marat S.
Publikováno v:
Електроніка та зв'язок : науково-технічний журнал, Т. 21, № 6(95)
Розглянуто структурні та технологічні аспекти поляризації багатокомпонентних твердих розчинів сполук A³B⁵, зокрема, тринітрідів галію
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2635::be1f31ddb1bc355c07b11b79e1b41f94
https://ela.kpi.ua/handle/123456789/20271
https://ela.kpi.ua/handle/123456789/20271
Autor:
N. О. Suhoviy, E. V. Semenovskaya, N. М. Lyahova, V. I. Osinskii, E. M. Faleeva, V. I. Timofeyev
Publikováno v:
Electronics and Communications. 19:32-36
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91101366ad31a15697709ce48ec68575
https://doi.org/10.20535/2312-1807.2014.19.5.38788
https://doi.org/10.20535/2312-1807.2014.19.5.38788
Publikováno v:
Sociological Research. May/Jun2004, Vol. 43 Issue 3, p54-66. 13p.
Autor:
Osinskii, V. I., Timofeyev, V. I., Semenovskaya, E. V., Lyahova, N. М., Suhoviy, N. О., Faleeva, E. M.
Publikováno v:
Electronics and Communications; Том 19, № 5 (2014); 32-36
Электроника и Связь; Том 19, № 5 (2014); 32-36
Електроніка та Зв'язок; Том 19, № 5 (2014); 32-36
Электроника и Связь; Том 19, № 5 (2014); 32-36
Електроніка та Зв'язок; Том 19, № 5 (2014); 32-36
The purpose of paper is to find the optimal parameters for decreasing dislocations in templet nanostructures. The estimation method of dislocation-free relief germination of templet nanostructures is developed. The influence of templet size on the di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=scientific_p::ca1974b264e22bd0fa3865253622da13
http://elc.kpi.ua/old/article/view/38788
http://elc.kpi.ua/old/article/view/38788
Autor:
Ivan I. Osinskii
Publikováno v:
Eurasian paradigm of Russia: values, ideas and experience.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4c58de5278db6e409a2f6a40c087fda
https://doi.org/10.18101/978-5-9793-0814-2-7-10
https://doi.org/10.18101/978-5-9793-0814-2-7-10
Publikováno v:
Sociological Research. 43:54-66
(2004). The Homeless : The Social Lower Depths of Society. Sociological Research: Vol. 43, No. 3, pp. 54-66.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1e14d2da05a02d24eece2669c19b140
https://doi.org/10.1080/10610154.2004.11068596
https://doi.org/10.1080/10610154.2004.11068596
Publikováno v:
Journal of Crystal Growth. :360-364
The kinetics of semiconductor nanocrystal formation and growth as a result of solid solution phase decomposition in semiconductor-doped thin silica films fabricated by a co-sputtering technique was investigated. Two regimes of decomposition, attribut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cebd7771eb8bd019bff7b216ca3e54d
https://doi.org/10.1016/s0022-0248(98)80076-6
https://doi.org/10.1016/s0022-0248(98)80076-6
Autor:
A. Ekimov, M. Gandais, M. Vatnik, Y.B. Wang, I. Kudriavtsev, A. Osinskii, S. Gurevich, A. Merkulov, O. Lublinskaya
Publikováno v:
Journal of Crystal Growth. 151:38-45
Ion implantation technique has been used for the preparation of semiconductor nanocrystals in SiO2 films deposited on semiconductor and quartz substrates. The structural properties of the films have been investigated by using low temperature optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf61638f8322ebcac98daf0d3dc33f93
https://doi.org/10.1016/0022-0248(95)00042-9
https://doi.org/10.1016/0022-0248(95)00042-9
Autor:
V. P. Osinskii
Publikováno v:
Chemical and Petroleum Engineering. 30:468-474
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db08d24f721f927b7d24fa74366c15b7
https://doi.org/10.1007/bf01150250
https://doi.org/10.1007/bf01150250