Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Oscar van der Straten"'
Autor:
Minhaz Abedin, Nanbo Gong, Karsten Beckmann, Maximilian Liehr, Iqbal Saraf, Oscar Van der Straten, Takashi Ando, Nathaniel Cady
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-10 (2023)
Abstract Analog hardware-based training provides a promising solution to developing state-of-the-art power-hungry artificial intelligence models. Non-volatile memory hardware such as resistive random access memory (RRAM) has the potential to provide
Externí odkaz:
https://doaj.org/article/1614322be3b64b7399a43c24e71f0a18
Autor:
Maxwell Lippitt, Virat Mehta, Donald F. Canaperi, Jessica Gruss-Gifford, Oscar van der Straten, Gabriel Rodriguez
Publikováno v:
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
This paper presents a multi-step process to improve the stability of plasma ignition of a magnetic target in a multi-cathode physical vapor deposition (PVD) system. Most target materials in the system have no issues igniting a stable plasma. The mate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b59086904b15550650b26978be19aa0
https://doi.org/10.1109/asmc49169.2020.9185236
https://doi.org/10.1109/asmc49169.2020.9185236
Autor:
Takeshi Nogami, Chih-Chao Yang, Oscar van der Straten, Nicholas A. Lanzillo, Andrew H. Simon, Daniel C. Edelstein
Publikováno v:
Journal of Vacuum Science & Technology A. 38:053402
The transition in manufacturing from Al(Cu)/W to Cu multilevel on-chip line/via ULSI wiring for high-performance CMOS logic chips was initiated in late 1997 and has since become the exclusive industry-standard. The authors provide a comprehensive rev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b85cd95074559d5b6eddb3d4c6e53ac8
https://doi.org/10.1116/6.0000170
https://doi.org/10.1116/6.0000170
Publikováno v:
Chemical Engineering Communications. 198:1453-1481
A robust diffusion barrier and metallization liner technology are critical for the realization of a functional and reliable interconnect structure. While copper barrier materials and processes have evolved significantly since the onset of copper-base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0d385c8b442391f0ee0b98eab44e1fa
https://doi.org/10.1080/00986445.2011.576450
https://doi.org/10.1080/00986445.2011.576450
Publikováno v:
Journal of Materials Research. 21:255-262
Solid-state wetting experiments were carried out to derive the work of adhesion (adhesion energy) of pertinent Cu/liner interfaces via the Young–Dupré equation using contact-angle measurements of the Cu equilibrium crystal shape on Ta and TaNx lin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4295e704d5c5bc0d4a611aafb8b1c070
https://doi.org/10.1557/jmr.2006.0040
https://doi.org/10.1557/jmr.2006.0040
Publikováno v:
Journal of Materials Research. 19:447-453
A metal–organic thermal atomic layer deposition (ALD) approach was developed for the growth of ultrathin tantalum nitride (TaNx) films by alternate pulses of tert-butylimido trisdiethylamido tantalum (TBTDET) and ammonia (NH3). An optimized ALD pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c1d180b2e6b70d595ddcd040d7b9348
https://doi.org/10.1557/jmr.2004.19.2.447
https://doi.org/10.1557/jmr.2004.19.2.447
Autor:
James J. Kelly, Terry A. Spooner, C.-K. Hu, X. Zhang, Motoyama Koichi, A. Simon, Raghuveer R. Patlolla, Oscar van der Straten, Hosadurga Shobha, Ming He, James Chingwei Li, Timothy M. Shaw, Kunaljeet Tanwar, Daniel C. Edelstein, Takeshi Nogami, Stephan A. Cohen, Moosung M. Chae, Elbert E. Huang, X. Lin, Griselda Bonilla, S. H. Chen, Christopher J. Penny
Publikováno v:
IEEE International Interconnect Technology Conference.
In order to maximize Cu volume and reduce via resistance, barrier thickness reduction is a strong option. Alternative barriers for next-generation BEOL were evaluated in terms of barrier performance to O 2 and Cu diffusion, and effects on reliability
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::818cfbb973a824603c3322facc72f165
https://doi.org/10.1109/iitc.2014.6831875
https://doi.org/10.1109/iitc.2014.6831875
Autor:
X. Zhang, Hosadurga Shobha, C. Parks, Ming He, X. Lin, Donald F. Canaperi, A. Simon, Anita Madan, James Chingwei Li, Raghuveer R. Patlolla, Kunaljeet Tanwar, Daniel C. Edelstein, J. Maniscalco, Oscar van der Straten, Philip L. Flaitz, Mahadevaiyer Krishnan, Christopher J. Penny, James J. Kelly, David L. Rath, Chenming Hu, Terry A. Spooner, Takeshi Nogami, Tibor Bolom
Publikováno v:
2013 IEEE International Interconnect Technology Conference - IITC.
In studying integrated dual damascene hardware at 10 nm node dimensions, we identified the mechanism for Co liner enhancement of Cu gap-fill to be a wetting improvement of the PVD Cu seed, rather than a local nucleation enhancement for Cu plating. We
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95a5fa2e9ef1fbefa9504d9b2ac43a7e
https://doi.org/10.1109/iitc.2013.6615592
https://doi.org/10.1109/iitc.2013.6615592
Autor:
Neal Lafferty, Hosadurga Shobha, Wenhui Wang, Terry A. Spooner, Tae-Soo Kim, Matthew E. Colburn, Yann Mignot, Yongan Xu, Yunpeng Yin, Benjamin Duclaux, Shyng-Tsong Chen, Chiew-seng Koay, Marcy Beard, James J. Kelly, Oscar van der Straten, Seowoo Nam, Ming He, Nicole Saulnier
Publikováno v:
2013 IEEE International Interconnect Technology Conference - IITC.
For sub-64nm pitch interconnects build, it is beneficial to use Self Aligned Double Patterning (SADP) scheme for line level patterning. Usually a 2X pitch pattern was printed first, followed by a Sidewall Image Transfer (SIT) technique to create the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39a5d247773726f8e5f9ada178ac4257
https://doi.org/10.1109/iitc.2013.6615589
https://doi.org/10.1109/iitc.2013.6615589
Autor:
Scott Halle, Marcy Beard, Chiew-seng Koay, Oscar van der Straten, T. Levin, Lars Liemann, Juntao Li, D. Horak, Bryan Morris, Terry A. Spooner, S. Choi, Carol Boye, Donald F. Canaperi, Sylvie Mignot, Muthumanickam Sankarapandian, Elbert E. Huang, Chiahsun Tseng, James Hsueh-Chung Chen, Erin Mclellan, James J. Kelly, S. Fan, James J. Demarest, Nicole Saulnier, Hosadurga Shobha, Matthew E. Colburn, Balasubramanian S. Haran, Yongan Xu, Yunpeng Yin, Larry Clevenger, Christopher J. Waskiewicz, Mignot Yann, John C. Arnold
Publikováno v:
2012 IEEE International Interconnect Technology Conference.
This work demonstrates the building of a 56 nm pitch copper dual damascene interconnects which connects to the local interconnect level. This M1/V0 dual-damascene used a triple pitch split bi-directional M1 and a double pitch split contact (V0) schem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f371baddebc7d64eac10bf2c213e8ee5
https://doi.org/10.1109/iitc.2012.6251637
https://doi.org/10.1109/iitc.2012.6251637