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pro vyhledávání: '"Oscar V. Huerta-G."'
Autor:
Edmundo A. Gutierrez-D., Jairo Mendez-V., Julio C. Tinoco, Emmanuel Torres Rios, Oscar V. Huerta-G.
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 385-390 (2020)
We introduce experimental results of the I-V degradation characteristics of a Silicon SOI technology for RF applications when stressed under both; a 28 GHz and a DC stress input signals. Then we compare the effect of DC and RF stress on threshold vol
Externí odkaz:
https://doaj.org/article/3f4f5d9d46844d6fb9f37ea808ca3b65
