Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Oscar D. Restrepo"'
Publikováno v:
IEEE Transactions on Electron Devices. 69:2579-2584
Autor:
E. Kaltalioglu, W. Taylor, Oscar D. Restrepo, Jeyaraj Antony Johnson, Mohamed A. Rabie, P. Paliwoda, Fernando Guarin, B. Min, E.C. Silva, K. Barnett, M. Boenke
Publikováno v:
IRPS
This paper presents a systematic methodology by thermal characterization and simulation of a 3-FET stacked K/Ka-band class-AB power amplifier built on GLOBALFOUNDRIES 45nm SOI process. A detailed temperature profile is obtained in the FEOL and BEOL s
Publikováno v:
Acta Materialia. 126:272-279
We extended and updated Mott's two-band model for the composition-dependence of thermal and electrical conductivity in binary metal alloys based on high-throughput time-domain thermoreflectance (TDTR) measurements on diffusion multiples and scatterer
Publikováno v:
New Journal of Physics, Vol 16, Iss 10, p 105009 (2014)
We examine the predictive capabilities of first-principles theoretical methods to calculate the phonon- and impurity-limited electron mobilities for a number of technologically relevant two-dimensional materials in comparison to experiment. The studi
Externí odkaz:
https://doaj.org/article/5e628ef30fae48eba0c3db35991fb5a8
Publikováno v:
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
We present ab initio-based electronic transport calculations on the effect of uniaxial and bi-axial stress on the CoSi 2 /n Si interface resistivity for the three main silicon crystallographic directions. For the [001] case, we identify two distincti
Autor:
Jeffrey B. Johnson, S. Furkay, Andreas Kerber, Haojun Zhang, N. Rao Mavilla, P. Paliwoda, Prashanth Paramahans Manik, Cathryn Christiansen, E. Maciejewski, Y. Deng, E. Cruz Silva, Shreesh Narasimha, S. Pinkett, Z. Chbili, Mohit Bajaj, Dhruv Singh, C-H. Lin, Oscar D. Restrepo, Srikanth Samavedam
Publikováno v:
IRPS
We present a hierarchical methodology using a combination of ab-initio phonon scattering, electron transmission, and multi-scale finite element simulations to accurately model process specific material physics and component level self-heating in FinF
Autor:
Hyungyu Jin, Nikolas Antolin, Oscar D. Restrepo, Roberto C. Myers, Stephen R. Boona, Joseph P. Heremans, Wolfgang Windl
Publikováno v:
Nature Materials. 14:601-606
Phonons are displacements of atoms around their rest positions in a crystalline solid. They carry sound and heat, but are not classically associated with magnetism. Here, we show that phonons are, in fact, sensitive to magnetic fields, even in diamag
Independent Ordering of Two Interpenetrating Magnetic Sublattices in the Double Perovskite Sr2CoOsO6
Autor:
Molly R. Ball, Bernd Büchner, Patrick M. Woodward, Oscar D. Restrepo, Sabine Wurmehl, Ryan Morrow, Wolfgang Windl, U. Stockert, Rohan Mishra
Publikováno v:
Journal of the American Chemical Society. 135:18824-18830
The insulating, fully ordered, double perovskite Sr2CoOsO6 undergoes two magnetic phase transitions. The Os(VI) ions order antiferromagnetically with a propagation vector k = (1/2, 1/2, 0) below TN1 = 108 K, while the high-spin Co(II) ions order anti
Autor:
Xi Sung Loo, Josef S. Watts, Bhoopendra Singh, Uwe Kahler, Michael Cheng, Murali Kota, S.N. Ong, Ralf Illgen, Maciej Wiatr, Byounghak Lee, Christoph Schwan, Oscar D. Restrepo, Kok Wai Johnny Chew, W.H. Chow, Andreas Huschka
Publikováno v:
2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
We report experimental improvement of both RF and digital AC performance of a 28nm CMOS technology by predoping the gate poly. The results are explained in terms of the physical structure of the gate and the atomic structure of the gate TiN/Si interf
Autor:
Emmanuelle A. Marquis, Katharine M. Flores, Allen H. Hunter, Stephen R. Niezgoda, Douglas C. Hofmann, Michael P. Gibbons, Oscar D. Restrepo, Vicente Araullo-Peters, Wolfgang Windl
Publikováno v:
Journal of microscopy. 264(3)
The mechanism of the increase in ductility in bulk metallic glass matrix composites over monolithic bulk metallic glasses is to date little understood, primarily because the interplay between dislocations in the crystalline phase and shear bands in t