Zobrazeno 1 - 10
of 147
pro vyhledávání: '"Oscar D. Dubon"'
Publikováno v:
AIP Advances, Vol 10, Iss 10, Pp 105215-105215-5 (2020)
We demonstrate the selective, pulsed-laser deposition of hexagonal GaS and monoclinic Ga2S3 films on sapphire substrates from a single Ga2S3 target in high-vacuum conditions. Growth at substrate temperatures below 550 °C causes GaS film formation, w
Externí odkaz:
https://doaj.org/article/347bb9dcfe534255af62bf6970243600
Autor:
Christian Kisielowski, Anthony Salazar, Jungiao Wu, Oscar D. Dubon, Diana Sanchez, Hector A. Calderon
Publikováno v:
Microscopy and Microanalysis. 27:2338-2340
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a11a1d8d6d674773bf0e08c4fefb41ff
https://doi.org/10.1017/s1431927621008412
https://doi.org/10.1017/s1431927621008412
Autor:
Sarah Warkander, Jun Kang, Anthony Salazar, Jianwei Miao, Oscar D. Dubon, Kechao Tang, Junqiao Wu, Yabin Chen, Wladek Walukiewicz, Jiaman Liu, Kazutaka Eriguchi, Penghong Ci, Xuezeng Tian, Sefaattin Tongay
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-8 (2020)
Nature communications, vol 11, iss 1
Nature Communications
Nature communications, vol 11, iss 1
Nature Communications
Properties of semiconductors are largely defined by crystal imperfections including native defects. Van der Waals (vdW) semiconductors, a newly emerged class of materials, are no exception: defects exist even in the purest materials and strongly affe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4be4f28e91aac9ab13c680b0ad8b2639
https://doaj.org/article/bc87cbf8a1af4a72999654fbb1223ee7
https://doaj.org/article/bc87cbf8a1af4a72999654fbb1223ee7
Autor:
Christian Kisielowski, Alyssa J. Fielitz, David F. Yancey, Anthony Salazar, Steven J. Rozeveld, David G. Barton, Petra Specht, Joo Kang, Dirk Van Dyck, Oscar D. Dubon
Publikováno v:
Microscopy and Microanalysis, vol 27, iss 6
Microscopy and microanalysis
Microscopy and microanalysis
Technological opportunities are explored to enhance detection schemes in transmission electron microscopy (TEM) that build on the detection of single-electron scattering events across the typical spectrum of interdisciplinary applications. They range
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e3545a5d9c4a7d86872e68bb38717237
https://escholarship.org/uc/item/91481957
https://escholarship.org/uc/item/91481957
Autor:
Penghong Ci, Oscar D. Dubon, Kazutaka Eriguchi, Sarah Warkander, Junqiao Wu, Xuezeng Tian, Wladek Walukiewicz, Anthony Salazar, Sefaattin Tongay, Jiaman Liu, Jianwei Miao, Kechao Tang, Yabin Chen, Jun Kang
Publikováno v:
Nature Communications
Nature communications, vol 11, iss 1
Nature Communications, Vol 11, Iss 1, Pp 1-1 (2020)
Nature communications, vol 11, iss 1
Nature Communications, Vol 11, Iss 1, Pp 1-1 (2020)
Properties of semiconductors are largely defined by crystal imperfections including native defects. Van der Waals (vdW) semiconductors, a newly emerged class of materials, are no exception: defects exist even in the purest materials and strongly affe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb16a00b8e238b8d452260456060f801
http://europepmc.org/articles/PMC7692484
http://europepmc.org/articles/PMC7692484
Publikováno v:
Chemistry of Materials. 30:4226-4232
We report the growth of layered GaSexTe1–x mesostructures across the whole composition range. For compositions up to x = 0.32 (the Te-rich region), mesocrystals form predominantly in the monoclinic structure, similar to naturally occurring GaTe. Ho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1734a1eda1e1489d1d416754e6d34380
https://doi.org/10.1021/acs.chemmater.8b00130
https://doi.org/10.1021/acs.chemmater.8b00130
Publikováno v:
Handbook of Spintronic Semiconductors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ef2135ebc7116f2262db06fc5f0b5cf
https://doi.org/10.1201/9780429065507-5
https://doi.org/10.1201/9780429065507-5
Publikováno v:
AIP Advances, Vol 10, Iss 10, Pp 105215-105215-5 (2020)
AIP Advances, vol 10, iss 10
AIP Advances, vol 10, iss 10
We demonstrate the selective, pulsed-laser deposition of hexagonal GaS and monoclinic Ga2S3 films on sapphire substrates from a single Ga2S3 target in high-vacuum conditions. Growth at substrate temperatures below 550 °C causes GaS film formation, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f4395d3b87e92fe607c0a3f0c345cbe
https://doaj.org/article/347bb9dcfe534255af62bf6970243600
https://doaj.org/article/347bb9dcfe534255af62bf6970243600
Autor:
J. E. Rault, M. Hategan, Jan Minár, J. P. Rueff, Charles S. Fadley, D. Eiteneer, C. Conlon, Shigenori Ueda, Slavomír Nemšák, A. Rattanachata, Lukasz Plucinski, Mathias Gehlmann, Michael A. Scarpulla, A. Keqi, A. Y. Saw, Alexander X. Gray, Claus M. Schneider, G. Conti, Gunnar K. Pálsson, Oscar D. Dubon, Keita Kobayashi
Publikováno v:
Physical Review B. 97
We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) Ga0.98Mn0.02P and compared it to that of an undoped GaP reference sample, using hard x-ray photoelectron spectroscopy (HXPS) and hard x-ray angle-resolved photoe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a02a9177b33b14cc8d9f099b36e1fa01
https://doi.org/10.1103/physrevb.97.155149
https://doi.org/10.1103/physrevb.97.155149
Autor:
James C. Culbertson, Cory D. Cress, Scott W. Schmucker, Jeremy T. Robinson, Oscar D. Dubon, Jeffrey W. Beeman
Publikováno v:
Carbon. 93:250-257
Layered two-dimensional crystal systems can exhibit complex interlayer interactions, which are influenced by local crystal structure and/or electronic variations. Here, we study the influence of defects in twisted bilayer graphene (TBG) using Raman s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e12ba75f2ce6ead7f894ca7e1f2e15c2
https://doi.org/10.1016/j.carbon.2015.05.076
https://doi.org/10.1016/j.carbon.2015.05.076