Zobrazeno 1 - 10
of 522
pro vyhledávání: '"Osborn, K."'
Autor:
Foroozani, N., Sarabi, B., Moseley, S. H., Stevenson, T., Wollack, E. J., Noroozian, O., Osborn, K. D.
Astronomical Kinetic Inductance Detectors (KIDs), similar to quantum information devices, experience performance limiting noise from materials. In particular, 1/f (frequency) noise can be a dominant noise mechanism, which arises from Two-Level System
Externí odkaz:
http://arxiv.org/abs/2202.11310
Autor:
Foroozani, N., Hobbs, C., Hung, C. C., Olson, S., Ashworth, D., Holland, E., Malloy, M., Kearney, P., O'Brien, B., Bunday, B., DiPaola, D., Advocate, W., Murray, T., Hansen, P., Novak, S., Bennett, S., Rodgers, M., Baker-O'Neal, B., Sapp, B., Barth, E., Hedrick, J., Goldblatt, R., Rao, S. S. Papa, Osborn, K. D.
Publikováno v:
Journal of Quantum Science and Technology, 2019
Qubit information processors are increasing in footprint but currently rely on e-beam lithography for patterning the required Josephson junctions (JJs). Advanced optical lithography is an alternative patterning method, and we report on the developmen
Externí odkaz:
http://arxiv.org/abs/1902.08501
Akademický článek
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Noise from atomic tunneling systems (TSs) limit the performance of various resonant devices, ranging in application from astronomy detectors to quantum computing. Using devices containing these TSs, we study the $1/f$ permittivity noise and loss tang
Externí odkaz:
http://arxiv.org/abs/1507.06043
Akademický článek
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Autor:
Jaim, H. M. Iftekhar, Aguilar, J. A., Sarabi, B., Rosen, Y. J., Ramanayaka, A. N., Lock, E. H., Richardson, C. J. K., Osborn, K. D.
Publikováno v:
IEEE T. Appl. Supercon. 25 (2015) 1-5
We have investigated properties of superconducting titanium nitride (TiN) films that were sputtered over a large range of RF-induced DC bias voltage applied to the substrate. Films grown with the largest bias voltages contained cubic TiN phases with
Externí odkaz:
http://arxiv.org/abs/1408.3177
Autor:
Khalil, M. S., Gladchenko, S., Stoutimore, M. J. A., Wellstood, F. C., Burin, A. L., Osborn, K. D.
Tunneling two level systems (TLS), present in dielectrics at low temperatures, have been recently studied for fundamental understanding and superconducting device development. According to a recent theory by Burin \textit{et al.}, the TLS bath of any
Externí odkaz:
http://arxiv.org/abs/1312.4865
Autor:
De Zylva J, Osborn K
Publikováno v:
Risk Management and Healthcare Policy, Vol Volume 13, Pp 2439-2447 (2020)
Joseph De Zylva, Kym Osborn Department of Anaesthesia, Lyell McEwin Hospital and Modbury Public Hospital, Northern Adelaide Local Health Network, Adelaide, South Australia, AustraliaCorrespondence: Joseph De ZylvaDepartment of Anaesthesia, Lyell McEw
Externí odkaz:
https://doaj.org/article/556987c5444747e5bb2e006515a5ae80
Autor:
Khalil, M. S., Stoutimore, M. J. A., Gladchenko, S., Holder, A. M., Musgrave, C. B., Kozen, A. C., Rubloff, G., Liu, Y. Q., Gordon, R. G., Yum, J. H., Banerjee, S. K., Lobb, C. J., Osborn, K. D.
Publikováno v:
Appl. Phys. Lett. 103, 162601 (2013)
Two-level system (TLS) defects in dielectrics are known to limit the performance of electronic devices. We study TLS using millikelvin microwave loss measurements of three atomic layer deposited (ALD) oxide films--crystalline BeO ($\rm{c-BeO}$), amor
Externí odkaz:
http://arxiv.org/abs/1307.7664
Publikováno v:
Appl. Phys. Lett. 101, 062602 (2012)
We have fabricated and measured Josephson junction defect spectrometers (JJDSs), which are frequency-tunable, nearly-harmonic oscillators that probe strongly-coupled two-level systems (TLSs) in the barrier of a Josephson junction (JJ). The JJDSs acco
Externí odkaz:
http://arxiv.org/abs/1203.4431