Zobrazeno 1 - 10
of 386
pro vyhledávání: '"Osamu Nakatsuka"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 744-750 (2022)
We investigated the interface crystalline structures and electrical conduction properties of epitaxial Hf-digermanide(HfGe2)/ ${n}$ -Ge(001) contacts with different electrode sizes of 20, 45, and $90~{\mu }\text{m}$ prepared via microfabrication. It
Externí odkaz:
https://doaj.org/article/c3bcf96c3cb14968a406b79d29f4ae25
Autor:
Ying Peng, Sijing Zhu, Huajun Lai, Jie Gao, Masashi Kurosawa, Osamu Nakatsuka, Sakae Tanemura, Biaolin Peng, Lei Miao
Publikováno v:
Journal of Materiomics, Vol 7, Iss 4, Pp 665-671 (2021)
In this study, a micro in-plane p-type thermoelectric generator (TEG), which consists of thin-film Si1−x−yGexSny ternary alloy semiconductor on insulator, is developed to make efficient use of waste heat such as human body. A power factor value a
Externí odkaz:
https://doaj.org/article/ae8d7f6a7e84426ea07619b0f6120bd1
High-pressure polycrystalline thin-film synthesis and semiconducting property of platinum pernitride
Autor:
Ken Niwa, Tomoki Iizuka, Masashi Kurosawa, Yuto Nakamura, Hubert Okadome Valencia, Hideo Kishida, Osamu Nakatsuka, Takuya Sasaki, Nico Alexander Gaida, Masashi Hasegawa
Publikováno v:
AIP Advances, Vol 12, Iss 5, Pp 055318-055318-5 (2022)
A polycrystalline platinum pernitride (PtN2) thin-film was successfully synthesized via nitridation of a platinum thin-film deposited on α-Al2O3 substrate at the pressure of ∼50 GPa by using the laser-heated diamond anvil cell. The current–volta
Externí odkaz:
https://doaj.org/article/60854ab27fe84d9388b9d591dda86334
Autor:
Shigeaki Zaima, Osamu Nakatsuka, Noriyuki Taoka, Masashi Kurosawa, Wakana Takeuchi, Mitsuo Sakashita
Publikováno v:
Science and Technology of Advanced Materials, Vol 16, Iss 4 (2015)
We review the technology of Ge1−xSnx-related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge1−xSnx-related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for rea
Externí odkaz:
https://doaj.org/article/16a01cc134ec4141be69139f1ecc27ca
Autor:
Jotaro Nagano, Shota Ikeguchi, Takuma Doi, Mitsuo Sakashita, Osamu Nakatsuka, Shigehisa Shibayama
Publikováno v:
Materials Science in Semiconductor Processing. 163:107553
Autor:
Masashi Kurosawa, Osamu Nakatsuka
Publikováno v:
ECS Transactions. 104:183-189
Publikováno v:
Materials Science in Semiconductor Processing. 161:107462
Publikováno v:
Materials Science in Semiconductor Processing. 158:107386
Autor:
Sakae Tanemura, Jie Gao, Osamu Nakatsuka, Masashi Kurosawa, Huajun Lai, Ying Peng, Biaolin Peng, Lei Miao, Sijing Zhu
Publikováno v:
Journal of Materiomics, Vol 7, Iss 4, Pp 665-671 (2021)
In this study, a micro in-plane p-type thermoelectric generator (TEG), which consists of thin-film Si1−x−yGexSny ternary alloy semiconductor on insulator, is developed to make efficient use of waste heat such as human body. A power factor value a
Autor:
Noriyuki Taoka, Masashi Kurosawa, Shigeaki Zaima, Osamu Nakatsuka, S. Asaba, Mitsuo Sakashita
Publikováno v:
ECS Transactions. 102:3-9
Group-IV alloy semiconductor materials are much attractive for photovoltaic application, as those realizes multijunction photovoltaic with multi-heterostructure like group-III-V compound semiconductors [1]. In addition, group-IV alloy materials are e