Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Osamu Nagao"'
Autor:
Yasuyuki Kajitani, Kazushige Kanda, Manabu Sato, Takahiro Shimizu, Hiroshi Sugawara, Junji Musha, Yee Lih Koh, Tomoki Nakagawa, Kazuaki Kawaguchi, Takahiro Sugimoto, Koji Hosono, Jumpei Sato, Mario Sako, Yusuke Ochi, Tomoaki Nakano, Katsuaki Sakurai, Ryo Fukuda, Ryoichi Tachibana, Naoki Kobayashi, Juan Lee, Hiroki Date, Hiroaki Nasu, Koichi Kawakami, Makoto Miakashi, Dai Nakamura, Yuuki Matsumoto, Jieyun Zhou, Shuo Chen, Tadashi Someya, Hiroshi Nakamura, Kosuke Yanagidaira, Namasivayam Raghunathan, Takeshi Ogawa, M. Kojima, Masami Masuda, Toshifumi Hashimoto, Jun Nakai, Takahisa Kawabe, Taira Shibuya, Masatsugu Ogawa, Osamu Nagao, Takahiro Yamashita, Teruo Takagiwa, Toshiki Hisada, Tomoharu Hashiguchi, Yasushi Nagadomi, Mizuki Uda, Noboru Shibata, Takatoshi Minamoto
Publikováno v:
IEEE Journal of Solid-State Circuits. 55:178-188
A 1.33-Tb 4-bit/cell quadruple-level (QLC) 3-D flash memory in a 96-word-line (WL)-layer technology that achieves 8.5 Gb/mm2 has been developed. This is the biggest capacity and the highest bit density ever reported. A source-bias-negative-sense with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79bedba3ba6edf399921f1719678c350
https://doi.org/10.1109/jssc.2019.2941758
https://doi.org/10.1109/jssc.2019.2941758
Autor:
J. Zhou, Teruo Takagiwa, Toshifumi Hashimoto, Y. Ochi, Toshiki Hisada, Mario Sako, Takahiro Yamashita, M. Uda, Takatoshi Minamoto, Hiroshi Sugawara, T. Kawabe, Noboru Shibata, N. Raghunathan, Junichi Sato, Koji Hosono, Osamu Nagao, T. Ogawa, Naoki Kobayashi, T. Someya, Shuo Chen, Ryo Fukuda, Koichi Kawakami, H. Date, Makoto Miakashi, Y. Matsumoto, Takahiro Shimizu, M. Sato, J. Nakai, Naohito Morozumi, M. Ogawa, Tomoharu Hashiguchi, Tomohiro Sugimoto, H. Takamoto, T. Nakano, T. Nakagawa, Masami Masuda, T. Shibuya, M. Kojima, Hiroshi Nakamura, H. Nasu, Kosuke Yanagidaira, Kiyofumi Sakurai, Yasushi Nagadomi, Kazuaki Kawaguchi, Yasuyuki Kajitani, Kazushige Kanda, Junji Musha, Ryoichi Tachibana, T. Kaneko, Y. L. Koh, Juan Lee, Dai Nakamura
Publikováno v:
ISSCC
Since 3D-Flash memory took over for 2D-Flash memory, chip capacity has continuously improved [1]–[3]. In the 2D-Flash era, 2b/cell (MLC) offered higher performance and reliability, while a 3b/cell (TLC) offered the lowest cost. Thanks to a larger f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::393ff9436b178f29b8711c1023ffae82
https://doi.org/10.1109/isscc.2019.8662443
https://doi.org/10.1109/isscc.2019.8662443
Autor:
Hong Ding, Yoshihiko Shindo, Kiyomi Naruke, Bo Lei, Hitoshi Shiga, T. Ogawa, Dana Lee, Junichi Sato, Eiichi Makino, Yuka Furuta, Dai Nakamura, Y. Kato, Go Shikata, Yoshinao Suzuki, Hiromitsu Komai, Yohji Watanabe, Alex Mak, T. Miwa, Rieko Tanaka, Manabu Sakai, M. Nakamichi, Takatoshi Minamoto, Gertjan Hemink, Kosuke Yanagidaira, T. Hara, Junji Musha, Brian Murphy, Yoshikazu Hosomura, Naoaki Kanagawa, Ayako Yuminaka, Kiyofumi Sakurai, Toshiaki Edahiro, Koichi Fukuda, Naoya Tokiwa, Koichi Kawakami, M. Higashitani, Makoto Iwai, Mai Muramoto, Yoshiyuki Matsunaga, Teruo Takagiwa, Manabu Watanabe, Osamu Nagao
Publikováno v:
IEEE Journal of Solid-State Circuits. 47:75-84
A 64-Gb MLC (2 bit/cell) NAND flash memory with the highest memory density to date as an MLC flash memory, has been successfully developed. To decrease the chip size, 2-physical-plane configuration with 16 KB wordline-length, a new bit-line hook-up a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0705805d83c2293720b84b5c38cb4d0d
https://doi.org/10.1109/jssc.2011.2164711
https://doi.org/10.1109/jssc.2011.2164711
Autor:
Ryuichi Tsujita, Hoyu Takahashi, Satoshi Gando, Jun Mimuro, Hajime Tsuji, Osamu Nagao, Tadashi Matsushita, Daizoh Saitoh, Yutaka Eguchi, Yoichi Sakata, Hiroyasu Ishikura, Isao Kitajima
Publikováno v:
Journal of Intensive Care
Background Thrombomodulin alfa (TM-α, recombinant thrombomodulin) significantly improved disseminated intravascular coagulation (DIC) when compared with heparin therapy in a phase III study. Post-marketing surveillance of TM-α was performed to eval
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c20ce7d9aa7992b389e4d7fb838bc65
https://pubmed.ncbi.nlm.nih.gov/25520842
https://pubmed.ncbi.nlm.nih.gov/25520842
Autor:
Eiichi Makino, Rieko Tanaka, Masaaki Higashitani, Hiromitsu Komai, Dai Nakamura, Kiyomi Naruke, Brian Murphy, Yoshikazu Hosomura, T. Ogawa, Junji Musha, Mai Muramoto, Ayako Yuminaka, G. Hemink, Yoshihiko Shindo, Yasuhiko Matsunaga, Yosuke Kato, Toshiaki Edahiro, Kiyofumi Sakurai, Naoaki Kanagawa, M. Watanabe, Hitoshi Shiga, Bo Lei, Koichi Fukuda, Naoya Tokiwa, Toru Miwa, Koichi Kawakami, Go Shikata, Takatoshi Minamoto, Junpei Sato, Hong Ding, Makoto Iwai, Alex Mak, Manabu Sakai, Teruo Takagiwa, Osamu Nagao, Takahiko Hara, Masaru Nakamichi, Dana Lee, Yuya Suzuki, Yuka Furuta, Kosuke Yanagidaira, Yoshihisa Watanabe
Publikováno v:
ISSCC
NAND flash memories are now indispensable for our modern lives. The application range of the storage memory devices began with digital still cameras and has been extended to USB memories, memory cards, MP3 players, cell phones including smart phones,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::362aa4eac762a5471fbc0119e0f572b9
https://doi.org/10.1109/isscc.2011.5746280
https://doi.org/10.1109/isscc.2011.5746280
Autor:
Osamu Nagao
Publikováno v:
Transactions of the Japan Society of Mechanical Engineers. 14:8-17
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f0001f5b3402667f6d2f7201f4b4df92
https://doi.org/10.1299/kikai1938.14.47-2_8
https://doi.org/10.1299/kikai1938.14.47-2_8