Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Osamu Morohara"'
Autor:
Hidetoshi Suzuki, Yuka Nakata, Masamitu Takahasi, Kazuma Ikeda, Yoshio Ohshita, Osamu Morohara, Hirotaka Geka, Yoshitaka Moriyasu
Publikováno v:
AIP Advances, Vol 6, Iss 3, Pp 035303-035303-6 (2016)
The formation and evolution of rotational twin (TW) domains introduced by a stacking fault during molecular-beam epitaxial growth of GaAs on Si (111) substrates were studied by in situ x-ray diffraction. To modify the volume ratio of TW to total GaAs
Externí odkaz:
https://doaj.org/article/efc7f18ef0514e1098b7c7ec08caedcc
Autor:
D. Yasuda, Y. Shibata, Koichiro Ueno, Osamu Morohara, Y. Sakurai, Hirotaka Geka, H. Fujita, Naohiro Kuze
Publikováno v:
Journal of Crystal Growth. 518:14-17
To fabricate low-consumption and high-resolution gas sensors, especially for methane (CH4) gas (which has absorption around wavelength of 3.3 μm), mid-infrared LEDs are required. Accordingly, to reduce Shockley Read Hall recombination and achieve hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2db0417ee2a1f4caed2af985ac2fa2b
https://doi.org/10.1016/j.jcrysgro.2019.02.049
https://doi.org/10.1016/j.jcrysgro.2019.02.049
Autor:
Y. Shibata, K. Kinoshita, M. Suzuki, Osamu Morohara, D. Yasuda, Hirotaka Geka, Y. Sakurai, H. Fujita, Naohiro Kuze
Publikováno v:
Semiconductor Science and Technology. 36:095041
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa890fd145568440a84ad3273831b263
https://doi.org/10.1088/1361-6641/ac1a2a
https://doi.org/10.1088/1361-6641/ac1a2a
Autor:
Koichiro Ueno, Yoshihiko Shibata, Osamu Morohara, Naohiro Kuze, Mitsuhiro Nakayama, Hiromi Fujita, Hirotaka Geka, Yoshiki Sakurai, Daiki Yasuda
Publikováno v:
2019 Compound Semiconductor Week (CSW).
High detectivity AlInSb mid-infrared photodiode sensor was fabricated on GaAs substrate. By inserting two pairs of 20 nm dislocation filter layers with high Al composition into n-type buffer layer, threading dislocation density was reduced to 1/3 or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c685ca061ca2d2c9b78e527d0d23f92
https://doi.org/10.1109/iciprm.2019.8819138
https://doi.org/10.1109/iciprm.2019.8819138
Autor:
D. Yasuda, Naohiro Kuze, Osamu Morohara, H. Fujita, M. Suzuki, Yoshihiko Shibata, Y. Sakurai, Hirotaka Geka
Publikováno v:
Journal of Applied Physics. 129:053106
We have systematically investigated highly mismatched AlInSb photodiodes grown on GaAs substrates operating in the mid-infrared range. A novel characterization method was introduced to analyze the recombination mechanism within an active layer of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::694cc61383195e5728168c7d31e5a169
https://doi.org/10.1063/5.0032563
https://doi.org/10.1063/5.0032563
Autor:
Hromi Fujita, Osamu Morohara, Edson Gomes Camargo, Koichiro Ueno, Yoshihiko Shibata, Yuji Goda, Hirotaka Geka, Naohiro Kuze
Publikováno v:
Infrared Sensors, Devices, and Applications VII.
In this paper, we report the performance of room temperature operated mid-infrared light emitting diode (LED) with an InSb buffer layer and AlInSb active/barrier layers, which showed to be suitable for non-dispersive infrared (NDIR) gas sensing. Char
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fd2ac573e198475cede4e91ef4e7f99
https://doi.org/10.1117/12.2272905
https://doi.org/10.1117/12.2272905
Highdetectivity AlInSb Midinfrared Photodiode Sensors with Dislocation Filter Layers for Gas Sensing
Autor:
Hiromi Fujita, Hirotaka Geka, Naohiro Kuze, Osamu Morohara, Yoshiki Sakurai, Mitsuhiro Nakayama, Yoshihiko Shibata, Daiki Yasuda, Masaru Suzuki
Publikováno v:
physica status solidi (a). 217:1900515
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bac6769c8dd68dab8861e4fb978fe381
https://doi.org/10.1002/pssa.201900515
https://doi.org/10.1002/pssa.201900515
Autor:
T. Yamauchi, T. Nakao, Y. Sakurai, M. Nakayama, Hirotaka Geka, M. Suzuki, H. Fujita, Osamu Morohara, Naohiro Kuze, Yoshihiko Shibata
Publikováno v:
Journal of Applied Physics. 126:134501
We investigated the electrical and optical properties of a highly mismatched AlInSb/GaAs photodiode sensor working in the mid-infrared range at room temperature. A substantial increase in the device performance was achieved by controlling the strain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5f8e6956d0f964de8abbcbda749aabd
https://doi.org/10.1063/1.5111933
https://doi.org/10.1063/1.5111933
Publikováno v:
Journal of Crystal Growth
We studied the effect of Sb4 irradiation on the growth of GaAs thin films on Si (111) substrates. GaAs thin films were grown by molecular beam epitaxy (MBE) system with As2 as a source. Sb4 was also supplied during the GaAs growth. We evaluated surfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::61fce4ac4d66b3e981a56cf61c01587d
https://doi.org/10.1016/j.jcrysgro.2013.02.002
https://doi.org/10.1016/j.jcrysgro.2013.02.002
Autor:
Koichiro Ueno, Hiromi Fujita, Osamu Morohara, Hirotaka Geka, Yoshihiko Shibata, Edson Gomes Camargo, Naohiro Kuze
Publikováno v:
physica status solidi (a). 215:1700449
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68973a5a4abf5d0908832759b1af98fe
https://doi.org/10.1002/pssa.201700449
https://doi.org/10.1002/pssa.201700449