Zobrazeno 1 - 10
of 60
pro vyhledávání: '"Osamu Maida"'
Publikováno v:
IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences. :1429-1433
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96cca50210801bfc49e7d036305f203b
https://doi.org/10.1587/transfun.2021eal2099
https://doi.org/10.1587/transfun.2021eal2099
Publikováno v:
IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences. :743-747
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::252915cde1ec4dbb5efcfb0440cd8b31
https://doi.org/10.1587/transfun.2021eal2033
https://doi.org/10.1587/transfun.2021eal2033
Publikováno v:
ECS Meeting Abstracts. :1301-1301
The performance of optical devices based on nitride semiconductors operating in the ultraviolet and visible wavelength regimes has been remarkably improved. For example, high-efficiency blue InGaN light-emitting diodes (LEDs) with an external quantum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba84c25e812eaeb41e04b31b92cf7fe1
https://doi.org/10.1149/ma2022-01311301mtgabs
https://doi.org/10.1149/ma2022-01311301mtgabs
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
This paper presents a self-bias NAND (SBNAND) gate and its application to a non-overlapping (NOL) clock generator for extremely low-voltage CMOS LSIs. The SBNAND, consisting of a main NAND gate and feedback inverter, improves the output performance a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd55ee61ac22175a8a61cdfb18dbdeaf
https://doi.org/10.7567/ssdm.2020.a-7-02
https://doi.org/10.7567/ssdm.2020.a-7-02
Autor:
Daisuke Kanemoto, Masaya Nishi, Kaori Matsumoto, Masahiro Numa, Tetsuya Hirose, Hikaru Sebe, Osamu Maida, Ryo Matsuzuka, Nobutaka Kuroki
Publikováno v:
NEWCAS
A ring oscillator (ROSC) for extremely low-voltage thermoelectric energy generators is presented. The ROSC is composed of dedicated low-voltage stacked body bias inverters (SBBIs) that are based on the conventional self-bias inverter (SBI) and stacke
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c34347e4a691d18c624966874e1e8e3
https://doi.org/10.1109/newcas49341.2020.9159838
https://doi.org/10.1109/newcas49341.2020.9159838
Publikováno v:
Thin Solid Films. 741:139026
We fabricated a diamond metal oxide semiconductor structure with a silicon dioxide (SiO2) film as the gate dielectric on B-doped diamond grown by a high-power-density microwave-plasma chemical vapor deposition method. The SiO2/B-doped diamond interfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a383ca940b7f3056aef139a639c0285
https://doi.org/10.1016/j.tsf.2021.139026
https://doi.org/10.1016/j.tsf.2021.139026
Publikováno v:
Journal of Crystal Growth. 480:51-55
We have developed a new fabrication process to decrease the effective activation energy of B atoms doped in diamond without a significant decrease in the carrier mobility by fabricating heavily B-doped clusters with very low mobility which are embedd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97a1195483d662877e31838677252ad2
https://doi.org/10.1016/j.jcrysgro.2017.10.008
https://doi.org/10.1016/j.jcrysgro.2017.10.008
Publikováno v:
Materials Science in Semiconductor Processing. 70:203-206
We have developed a highly-sensitive transient photocapacitance measurement (TPM) system for deep defects in wide bandgap materials, and applied it to characterize the boron-doped diamond films grown on a high-pressure/high-temperature-synthesized Ib
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9268aae232846a651374d0b86bf07fce
https://doi.org/10.1016/j.mssp.2016.12.001
https://doi.org/10.1016/j.mssp.2016.12.001
Publikováno v:
MRS Advances. 2:2355-2360
We have found that several nitrogen-related luminescence centers appear at 389 nm, 503 nm (H3 center), 575 nm (NV0 center), 637 nm (NV- center) in single-crystalline Ib diamond cut by means of a YAG laser irradiation process, followed by a suitable h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::156c9ebe78e1060b9d93b5cc5df58c01
https://doi.org/10.1557/adv.2017.414
https://doi.org/10.1557/adv.2017.414
Autor:
Nobutaka Kuroki, Masahiro Numa, Masaya Nishi, Ryo Matsuzuka, Osamu Maida, Daisuke Kanemoto, Kaori Matsumoto, Tetsuya Hirose, Yuichiro Nakazawa
Publikováno v:
ICECS
This paper proposes an extremely-low-voltage CMOS driver circuit for multi-stage switched-capacitor (SC) voltage boost converter (VBC). The SC VBC using a conventional driver could not generate sufficient boosted clock signals when the input voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8a790333f42896160ea20d0124e5c91
https://doi.org/10.1109/icecs46596.2019.8964719
https://doi.org/10.1109/icecs46596.2019.8964719