Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Osamu Komoda"'
Autor:
Hiromitsu Miyazono, Tsuyoshi Usagawa, Osamu Komoda, Katsuya Takahashi, Masanao Ebata, Tomohiro Ishiodori
Publikováno v:
Acoustical Science and Technology. 22:351-357
In this paper, the thresholds of detection and laterality are explored using a tone signal with interaural time difference (ITD) and a diotic tone masker in the three stimulus configurations: in simultaneous, forward and backward masking paradigms. T
Publikováno v:
Acoustical Science and Technology. 26:296-298
Autor:
Shigemitsu Nakanishi, Yusuke Mizokawa, Chao Jiang, Nan Li, Hong Shen Diang, Sunao Miyase, Osamu Komoda, Chang‐Heng Wang
Publikováno v:
Journal of Applied Physics. 67:264-269
Auger electron spectroscopy (AES) and x‐ray photoelectron spectroscopy (XPS) measurements have been carried out on the β‐SiC(100) surface simultaneously. The AES and XPS results differ significantly in the bonding state of oxygen for both as‐g
Publikováno v:
SPIE Proceedings.
A stereoscopic projection display using a curved directional reflection screen (CDR) is proposed. The CDR is composed of a corner reflection mirror sheet for horizontal focusing and a lenticular lens sheet for vertical diffusion. The vertically curve
Publikováno v:
SHINKU. 26:461-465
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. 31:335-354
The cause of the apparent chemical shifts (ACS's) of XPS peaks between oxide and substrate GaP has been studied. The ACS's for Ga 3 d , P 2 p and Ga LMM change significantly depending on the conditions of oxidation. The changes in the ACS's are consi
Autor:
Tatsuro Miyasato, Masao Tokumura, Yusuke Mizokawa, Osamu Komoda, Shogo Nakamura, Shigehiko Hasegawa
Publikováno v:
Electronics and Communications in Japan (Part II: Electronics). 70:40-48
Diamond-like carbon (DLC) films were deposited on silicon wafers by hydrogen gas reactive dc-sputtering of graphite and fabricated MIS diodes. ESCA chemical depth profiles showed that almost no impurities such as oxygen and nitrogen were present in t
Publikováno v:
Japanese Journal of Applied Physics. 23:L257
The room temperature oxidation of GaSb in air has been monitored for 3 years by XPS. The depth profiles of the 3 years-grown oxide clearly show that the over layer composition changed for a prolonged length of time; the amount of Sb2O3 decreased wher
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