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pro vyhledávání: '"Osama S. Elsherif"'
Publikováno v:
Materials Science Forum. :1315-1318
Admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) have been applied to B-doped thin polycrystalline diamond films deposited on p+-silicon by hot filament chemical vapour deposition. Films with two boron concentrations (1.5×10