Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Osama M. Nayfeh"'
Publikováno v:
AIP Advances, Vol 14, Iss 8, Pp 085228-085228-10 (2024)
To improve artificial intelligence/autonomous systems and help with treating neurological conditions, there is a requirement for the discovery and design of artificial neuron hardware that mimics the advanced functionality and operation of the neural
Externí odkaz:
https://doaj.org/article/fa474076ff1e4d409dc8320ba5998df7
Autor:
Lance Lerum, Mohammed Fahem, Osama M. Nayfeh, C. Dave Rees, Kenneth S. Simonsen, Ayax D. Ramirez
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 5, Iss 5, Pp 347-361 (2017)
Novel niobium heterostructure devices that integrate aluminum, hafnium, and chromium oxide are designed and constructed by sputtering and atomic layer deposition. The devices are examined for use in resistive switching (RS) memory cells. Specifically
Externí odkaz:
https://doaj.org/article/56136896c4644bb68f1c1f2e3b8d0893
Autor:
C. Dave Rees, Ayax D. Ramirez, Mohammed Fahem, Kenneth Simonsen, Lance Lerum, Osama M. Nayfeh
Publikováno v:
IEEE Journal of the Electron Devices Society. 5:347-361
Novel niobium heterostructure devices that integrate aluminum, hafnium, and chromium oxide are designed and constructed by sputtering and atomic layer deposition. The devices are examined for use in resistive switching (RS) memory cells. Specifically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc425f1099301e97e7c2e2e8794de67f
https://doi.org/10.1109/jeds.2017.2723870
https://doi.org/10.1109/jeds.2017.2723870
Publikováno v:
Nanoelectronic Device Applications Handbook ISBN: 9781315216089
The design fabrication, characterization and modeling of high speed nanotransistors based on large-area atomically thin CVD graphene are presented. Interfacing of the graphene for the first time with advanced dielectrics, such as (piezo) AlN for enha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98b177bacdeb908367f41cac2d28d3f3
https://doi.org/10.1201/b15035-30
https://doi.org/10.1201/b15035-30
Autor:
T. L. Reinecke, D. K. Gaskill, Hector Romero, J. Cothern, C. Torres, Lance Lerum, Patrick C. Sims, Hunter Banks, Osama M. Nayfeh, R. Barua, B. Liu, Kenneth Simonsen, Ayax D. Ramirez, Brian Higa, M. Lasher, A. deEscobar, B. Davidson, Samuel G. Carter, Mohammed Fahem
Publikováno v:
Quantum Photonic Devices.
Defect qubits in silicon carbide are an emerging system for quantum information science and technology. It is important to passivate and protect the surface to preserve the particular defect configurations as well as to provide means to tune the opto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a28c5e0d067bd405f37ec5a0fd7f3c84
https://doi.org/10.1117/12.2272774
https://doi.org/10.1117/12.2272774
Autor:
Gregory S. Kanter, D. Chao, Mohammed Fahem, Patrick C. Sims, C. D. Rees, Lance Lerum, J. Cothern, Osama M. Nayfeh, M. Tukeman, B. Lynn, Ayax D. Ramirez, B. Davidson, J. Moore, A. Upchurch, B. Liu, N. Djapic, R. Barua, Brian Higa, V. Anant, C. Torres, S. Zlatanovic, V. Dinh, S. Sharma
Publikováno v:
Quantum Photonic Devices.
Optically active rare-earth Neodymium (Nd) ions are integrated in Niobium (Nb) thin films forming a new quantum memory device (Nd:Nb) targeting long-lived coherence times and multi-functionality enabled by both spin and photon storage properties. Nb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7aad68a94c522ede88b2498c6c0d3794
https://doi.org/10.1117/12.2273012
https://doi.org/10.1117/12.2273012
Publikováno v:
Nano Energy. 2:133-137
Nanomaterials with quasi-zero, one and two dimensionalities, including silicon nanoparticles, carbon nanotubes, titanium oxide particles and graphene flakes, have been incorporated into the conducting polymer polyaniline to form nanocomposite materia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61889ee1e780cfcf6d5e7bd3827c225d
https://doi.org/10.1016/j.nanoen.2012.08.007
https://doi.org/10.1016/j.nanoen.2012.08.007
Autor:
Brian Higa, Son Dinh, Howard L. Dyckman, Fernando Escobar, Charlie Newton, Juan Bennett, Joanna Ptasinski, Teresa Emery, Dave Rees, Aram Kevorkian, Kenneth Simonsen, Flemon Mark W, Osama M. Nayfeh, Anna Leese deEscobar
Publikováno v:
2016 74th Annual Device Research Conference (DRC).
This work provides a novel concept for a voltage-programmable quantum memory with capability to tune superconducting qubits. Electric field-induced ion transport in Superconductor-Ionic hetero-structures programs the tunneling current and Hamiltonian
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bbc4c13c087d9a5a34e9b1439ce2ba5
https://doi.org/10.1109/drc.2016.7548439
https://doi.org/10.1109/drc.2016.7548439
Autor:
Osama M. Nayfeh
Publikováno v:
IEEE Transactions on Electron Devices. 58:2847-2853
Large-area graphene is synthesized by Cu-catalyzed chemical vapor deposition (CVD), transistors are constructed, and the dc/RF performance is examined. Top-gate transistors, i.e., with a gate length of 3 μm and Vds = 5 V, have a peak dc transconduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c697c19a0352ac9c24dfdd4f9b2fc6f4
https://doi.org/10.1109/ted.2011.2159721
https://doi.org/10.1109/ted.2011.2159721
Publikováno v:
International Journal of High Speed Electronics and Systems. 20:669-677
Graphene transistors using large area chemical-vapor-deposited (CVD) monolayer graphene and advanced dielectric stacks are constructed and examined. Top-gated devices with a SiO 2/ Al 2 O 3 gate-dielectric have a Dirac Point (DP) located at less than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a440b7c43154ee8651291dd2a4a4928
https://doi.org/10.1142/s0129156411006957
https://doi.org/10.1142/s0129156411006957