Zobrazeno 1 - 10
of 85
pro vyhledávání: '"Ortolland, S."'
Autor:
Berthelon, R., Andrieu, F., Ortolland, S., Nicolas, R., Poiroux, T., Baylac, E., Dutartre, D., Josse, E., Claverie, A., Haond, M.
Publikováno v:
In Solid State Electronics February 2017 128:72-79
Publikováno v:
In Materials Science & Engineering B 1999 61:411-414
Publikováno v:
Journal of Applied Physics; 8/1/1998, Vol. 84 Issue 3, p1688, 5p, 4 Diagrams, 8 Graphs
Autor:
Ortolland, S., Raynaud, C., Chante, J. P., Locatelli, M. L., Lebedev, A. A., Andreev, A. N., Savkina, N. S., Chelnokov, V. E., Rastegaeva, M. G., Syrkin, A. L.
Publikováno v:
Journal of Applied Physics; 11/1/1996, Vol. 80 Issue 9, p5464, 5p, 3 Diagrams, 8 Graphs
Autor:
Berthelon, R., Andrieu, F., Ortolland, S., Nicolas, R., Poiroux, T., Baylac, E., Dutartre, D., Josse, E., Claverie, A., Haond, M.
Publikováno v:
2016 Joint International EUROSOI Workshop & International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS); 2016, p88-91, 4p
Autor:
Ortolland, S.1, Nicolas, R.1, Baylac, E.1, Dutartre, D.1, Josse, E.1, Haond, M.1, Berthelon, R.1,2,3, Andrieu, F.2, Poiroux, T.2, Claverie, A.3
Publikováno v:
Solid-State Electronics. Feb2017, Vol. 128, p72-79. 8p.
Publikováno v:
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD); 2015, p73-76, 4p
Autor:
Lebedev, A, Strel'Chuk, A, Ortolland, S., Raynaud, C, Locatelli, Marie-Laure, Planson, D., Chante, J.-P
Publikováno v:
Institute of Physics Conference Series
Institute of Physics Conference Series, Institute of Physics Publishing, 1996
Institute of Physics Conference Series, Institute of Physics Publishing, 1996
International audience; In this paper negative temperature coefficient of the 6H-SiC diode breakdown voltage is considered. It is shown that the temperature dependence of the breakdown voltage value can be explained in terms of recharging of deep cen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::ad822b4b828a2d67690c2982fde09c65
https://hal.archives-ouvertes.fr/hal-02423361/file/full_article.pdf
https://hal.archives-ouvertes.fr/hal-02423361/file/full_article.pdf
Autor:
Hniki, S., Bertrand, G., Morancho, F., Ortolland, S., Minondo, M., Rauber, B., Raynaud, C., Giry, A., Bon, O., Jaouen, H.
Publikováno v:
2009 21st International Symposium on Power Semiconductor Devices & IC's; 2009, p96-99, 4p
Autor:
Hniki, S., Bertrand, G., Ortolland, S., Minondo, M., Rauber, B., Raynaud, C., Giry, A., Bon, O., Jaouen, H., Morancho, F.
Publikováno v:
2009 Proceedings of the European Solid State Device Research Conference; 2009, p296-299, 4p