Electrothermal characterisation of silicon and silicon carbide power devices for condition monitoring

Autor: Ortiz Gonzalez, Jose Angel

Condition monitoring in power electronics is increasingly becoming a critical component of reliable power electronics both in traditional discrete and DBC packages as well as in pressure-packages. Condition monitoring involves on and off-line assessm

Externí odkaz: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.737732

Electrothermal modelling and measurements of parallel-connected VTH mismatched SiC MOSFETs under inductive load switching

Autor: Mendy, Simon, Wu, Ruizhu, Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M.

In high current applications that use several parallel-connected SiC MOSFETs (e.g., automotive traction inverters), optimal current sharing is integral to overall system reliability. Threshold voltage (VTH) variation in SiC MOSFETs is a prevalent rel

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::3d1b74137493de60663cbebdaaed4002
http://wrap.warwick.ac.uk/168188/1/WRAP-electrothermal-modelling-measurements-parallel-connected-VTH-mismatched-SiC-MOSFETs-under-inductive-load-switching-2022.pdf

Analysis of dynamic transients of high voltage silicon and 4H-SiC NPN BJTs\ud \ud

Autor: Shen, Chengjun, Jahdi, Saeed, Mellor, Phil, Yuan, Xibo, Alatise, Olayiwola M., Ortiz-Gonzalez, Jose Angel

4H-SiC vertical NPN BJTs are attractive power devices with potentials to be used as high power switching devices with high voltage ratings in range of 1.7 kV. Compared with silicon power BJTs, they particularly benefit from a large current gain to a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::01276ada0b42ae4064b98255d37ef787
http://wrap.warwick.ac.uk/162611/1/WRAP-Analysis-dynamic-transients-high-voltage-silicon-4H-SiC-NPNBJTs-2021.pdf

An initial consideration of silicon carbide devices in pressure-packages

Autor: Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Ran, Li, Mawby, P. A. (Philip A.), Rajaguru, Pushparajah, Bailey, Christopher

Fast switching SiC Schottky diodes are known to exhibit significant output oscillations and electromagnetic emissions in the presence of parasitic inductance from the package/module connections. Furthermore, solder pad delamination and wirebond lift-

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::bdcc4f6ed35f890d828f41300fdea59f
http://wrap.warwick.ac.uk/86129/1/WRAP_engineering-210217-pid4330033_lr.pdf

Finite element modelling and experimental characterisation of paralleled SiC MOSFET failure under avalanche mode conduction.

Autor: Hu, Ji, Alatise, Olayiwola, Ortiz-Gonzalez, Jose Angel, Alexakis, Petros, Ran, Li, Mawby, Phil

Publikováno v: 2015 IEEE MTT-S 2015 International Microwave Workshop Series on RF & Wireless Technologies for Biomedical & Healthcare Applications (IMWS-BIO); 2015, p1-9, 9p