A Roadmap for Controlled and Efficient n-type Doping of Self-assisted GaAs Nanowires Grown by Molecular Beam Epitaxy

Autor: Orrù, Marta, Repiso, Eva, Carapezzi, Stefania, Henning, Alex, Roddaro, Stefano, Franciosi, Alfonso, Rosenwaks, Yossi, Cavallini, Anna, Martelli, Faustino, Rubini, Silvia

Publikováno v: Advanced Functional Materials 2016

N-type doping of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities is enhanced by the nanowire growth mechanism and growth conditions. The controllable growth of n-type GaAs nanowires with carrier densit

Externí odkaz: http://arxiv.org/abs/2104.04218

Nanowire growth and sublimation: CdTe quantum dots in ZnTe nanowires

Autor: Orrù, Marta, Robin, Eric, Hertog, Martien I Den, Moratis, Kimon, Genuist, Yann, André, Régis, Ferrand, David, Cibert, Joel, Bellet-Amalric, Edith

Publikováno v: Phys. Rev. Materials 2, 043404 (2018)

The role of the sublimation of the compound and of the evaporation of the constituents from the gold nanoparticle during the growth of semiconductor nanowires is exemplified with CdTe-ZnTe heterostructures. Operating close to the upper temperature li

Externí odkaz: http://arxiv.org/abs/1803.10610

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A Roadmap for Controlled and Efficient n-Type Doping of Self-Assisted GaAs Nanowires Grown by Molecular Beam Epitaxy

Autor: Marta Orrù, Alfonso Franciosi, Yossi Rosenwaks, Alex Henning, Stefano Roddaro, Eva Repiso, Stefania Carapezzi, Silvia Rubini, Anna Cavallini, Faustino Martelli

Publikováno v: Advanced functional materials (Internet) (2016): 2836–2845. doi:10.1002/adfm.201504853
info:cnr-pdr/source/autori:Orru M.; Repiso E.; Carapezzi S.; Henning A.; Roddaro S.; Franciosi A.; Rosenwaks Y.; Cavallini A.; Martelli F.; Rubini S./titolo:A Roadmap for Controlled and Efficient n-Type Doping of Self-Assisted GaAs Nanowires Grown by Molecular Beam Epitaxy/doi:10.1002%2Fadfm.201504853/rivista:Advanced functional materials (Internet)/anno:2016/pagina_da:2836/pagina_a:2845/intervallo_pagine:2836–2845/volume

N-type doping of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities is enhanced by the nanowire growth mechanism and growth conditions. The controllable growth of n-type GaAs nanowires with carrier densit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4825d6a37dc3dc3d3c8cd7733034e557
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